Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 3066-3072

  Saeki, Akinori ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a   Cao, Heidi B ^b  

^a OSAKA UNIVERSITY   (Japan)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DOSIMETRY; PHOTOLITHOGRAPHY; PROTONS; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

LINE EDGE ROUGHNESS; PROTON DYNAMICS;

MOLECULAR DYNAMICS;

EID: 33845275390     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2393250     Document Type: Article

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