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1
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0037002440
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Fabrication and characterization of polycrystalline SiC resonators
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Dec.
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S. Roy, R. G. DeAnna, C. A. Zorman, and M. Mehregany, "Fabrication and characterization of polycrystalline SiC resonators," IEEE Trans. Electron. Devices, vol. 49, pp. 2323-2332, Dec. 2002.
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IEEE Trans. Electron. Devices
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Roy, S.1
DeAnna, R.G.2
Zorman, C.A.3
Mehregany, M.4
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Silicon carbide as a new MEMS technology
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P. M. Sarro, "Silicon carbide as a new MEMS technology," Sens. Actuators A, vol. 82, pp. 210-218, 2000.
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Sens. Actuators A
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Sarro, P.M.1
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3
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High modulus polycrystalline 3C-SiC technology for RF MEMS
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D. Gao, M. B. J. Wijesundara, C. Carraro, C. W. Low, R. T. Howe, and R. Maboudian, "High modulus polycrystalline 3C-SiC technology for RF MEMS," in Proc. Transducers 12th Int. Conf. Solid-State Sensors and Actuators, 2003, pp. 1160-1163.
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Proc. Transducers 12th Int. Conf. Solid-state Sensors and Actuators
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Gao, D.1
Wijesundara, M.B.J.2
Carraro, C.3
Low, C.W.4
Howe, R.T.5
Maboudian, R.6
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4
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3142775978
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Fracture of polycrystalline SiC films in microsystems
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to be published
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D. Gao, C. Carraro, V. Radmilovic, R. T. Howe, and R. Maboudian, "Fracture of polycrystalline SiC films in microsystems," J. Microelectromech. Syst., to be published.
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J. Microelectromech. Syst.
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Gao, D.1
Carraro, C.2
Radmilovic, V.3
Howe, R.T.4
Maboudian, R.5
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5
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3142705494
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Tribological impact of SiC coating on released polysilicon microstructures
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to be published
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W. R. Ashurst, M. B. J. Wijesundara, C. Carraro, and R. Maboudian, "Tribological impact of SiC coating on released polysilicon microstructures," Tribal. Lett., to be published.
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Tribal. Lett.
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Ashurst, W.R.1
Wijesundara, M.B.J.2
Carraro, C.3
Maboudian, R.4
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6
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0034429272
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Silicon carbide for microelectromechanical systems
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M. Mehregany, C. A. Zorman, S. Roy, A. J. Fleischman, C.-H. Wu, and N. Rajan, "Silicon carbide for microelectromechanical systems," Int. Mater. Rev., vol. 45, no. 3, pp. 85-108, 2000.
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Fleischman, A.J.4
Wu, C.-H.5
Rajan, N.6
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7
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Simulation, fabrication and testing of bulk micromachined 6H-SiC high-g piezoresistive accelerometers
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A. R. Atwell, R. S. Okojie, K. T. Kornegay, S. L. Roberson, and A. Beliveau, "Simulation, fabrication and testing of bulk micromachined 6H-SiC high-g piezoresistive accelerometers," Sens. Actuators A, vol. 104, no. 1, pp. 11-18, 2003.
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Atwell, A.R.1
Okojie, R.S.2
Kornegay, K.T.3
Roberson, S.L.4
Beliveau, A.5
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8
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Silicon carbide micro-reaction-sintering using micromachined silicon molds
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S. Tanaka, S. Sugimoto, J. F. Li, R. Watanage, and M. Esashi, "Silicon carbide micro-reaction-sintering using micromachined silicon molds," J. Microelectromech. Syst., vol. 10, no. 1, pp. 55-61, 2001.
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Tanaka, S.1
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Esashi, M.5
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9
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High-pressure bipropellant microrocket engine
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A. P. London, A. H. Epstein, and J. L. Kerrebrock, "High-pressure bipropellant microrocket engine," J. Propul. Power, vol. 17, no. 4, pp. 780-787, 2001.
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J. Propul. Power
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London, A.P.1
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Kerrebrock, J.L.3
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10
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3142695190
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Low temperature CVD SiC coated microcomponents for reduced scale engines
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to be published
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M. B. J. Wijesundara, D. C. Walther, C. R. Stoldt, K. Fu, D. Gao, C. Carraro, A. P. Pisano, and R. Maboudian, "Low temperature CVD SiC coated microcomponents for reduced scale engines," in Proc. ASME Int. Mechanical Engineering Congr., to be published.
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Proc. ASME Int. Mechanical Engineering Congr.
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Wijesundara, M.B.J.1
Walther, D.C.2
Stoldt, C.R.3
Fu, K.4
Gao, D.5
Carraro, C.6
Pisano, A.P.7
Maboudian, R.8
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11
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0032675050
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Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels
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D.S. Wuu, R. H. Horng, C. C. Chan, and Y. S. Lee, "Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels," Appl. Surf. Sci., vol. 145, pp. 708-712, 1999.
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Appl. Surf. Sci.
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Wuu, D.S.1
Horng, R.H.2
Chan, C.C.3
Lee, Y.S.4
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12
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0034008849
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Sputtered silicon carbide thin films as protective coating for MEMS applications
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N. Ledermann, J. Baborowski, P. Muralt, N. Xantopoulos, and J. M. Tellenbach, "Sputtered silicon carbide thin films as protective coating for MEMS applications," Surf. Coat. Tech., vol. 125, no. 1-3, pp. 246-250, 2000.
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Tellenbach, J.M.5
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13
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0036544006
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A low-temperature CVD process for silicon carbide MEMS
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C. R. Stoldt, C. Carraro, W. R. Ashurst, D. Gao, R. T. Howe, and R. Maboudian, "A low-temperature CVD process for silicon carbide MEMS," Sens. Actuators A, vol. 97, pp. 410-415, 2002.
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Sens. Actuators A
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Stoldt, C.R.1
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Ashurst, W.R.3
Gao, D.4
Howe, R.T.5
Maboudian, R.6
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14
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0035129586
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The microstructure and surface morphology of thin SC-SiC films grown on (100) Si substrates using an APCVD-based carbonization process
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C. H. Wu, J. Chung, M. H. Hong, C. A. Zorman, P. Pirouz, and M. Mehregany, "The microstructure and surface morphology of thin SC-SiC films grown on (100) Si substrates using an APCVD-based carbonization process," in Mater. Sci. Forum, vol. 353-3, 2000, pp. 167-170.
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Mater. Sci. Forum
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Wu, C.H.1
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Zorman, C.A.4
Pirouz, P.5
Mehregany, M.6
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15
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0034528924
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High vacuum chemical vapor deposition of cubic SiC thin films on Si(001) substrates using single source precursor
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J.-H. Boo, S.-B. Lee, K.-S. Yu, M. M. Sung, and Y. Kim, "High vacuum chemical vapor deposition of cubic SiC thin films on Si(001) substrates using single source precursor," Surf. Coat. Technol., vol. 131, no. 1-3, pp. 147-152, 2000.
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Sung, M.M.4
Kim, Y.5
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16
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1842426190
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Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor, part I: Growth, structure, and chemical characterization
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M. B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, "Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor, part I: growth, structure, and chemical characterization," J. Electrochem. Soc., vol. 151 (3), pp. C210-C214, 2004.
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J. Electrochem. Soc.
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Carraro, C.6
Maboudian, R.7
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17
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84880997382
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Characterization of residual strain in SiC films deposited using 1,3-disilabutane for MEMS applications
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D. Gao, M. B. J. Wijesundara, R. T. Howe, and R. Maboudian, "Characterization of residual strain in SiC films deposited using 1,3-disilabutane for MEMS applications," J. Microlith., Microfab., Microsyst., vol. 2, no. 4, pp. 259-264, 2003.
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Gao, D.1
Wijesundara, M.B.J.2
Howe, R.T.3
Maboudian, R.4
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0040511221
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A review of SiC reactive ion etching in fluorinated plasmas
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P. H. Yih, V. Saxena, and A. J. Steckl, "A review of SiC reactive ion etching in fluorinated plasmas," Phys. Stat. Sol. B, vol. 202, pp. 605-642, 1997.
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Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
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B. F. Lanois, D. Planson, M. L. Locatelli, P. Lassagne, C. Jaussaud, and J. P. Chante, "Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor," J. Electron. Mater., vol. 28, no. 3, pp. 219-224, 1999.
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S. Tanaka, K. Rajanna, T. Abe, and M. Esashi, "Deep reactive ion etching of silicon carbide," J. Vac. Sci. Technol. B., vol. 19, no. 6, pp. 2173-2176, 2001.
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0037451391
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High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma
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D. Gao, R. T. Howe, and R. Maboudian, "High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma," Appl. Phys. Lett., vol. 82, no. 11, pp. 1742-1744, 2003.
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