Fabrication and characterization of high-current-gain 4H-SiC bipolar junction transistors

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1899-1906

  Zhang, Jianhui ^a   Li, Xueqing ^a   Alexandrov, Petre ^a   Fursin, Leonid ^a   Wang, Xiaohui ^a   Zhao, Jian H ^b  

^a UNITED SILICON CARBIDE INC   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Bipolar junction transistors (BJTs); Power transistor; Silicon carbide

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; NONMETALS; OPTICAL DESIGN; SILICON; SILICON WAFERS; TRANSISTORS; TUNNEL DIODES;

BIPOLAR JUNCTION TRANSISTORS; BIPOLAR JUNCTION TRANSISTORS (BJTS); COMMON-EMITTER CURRENT GAIN; CURRENT GAINS; HIGH CURRENTS; ON-STATE RESISTANCE; POWER HANDLING; POWER TRANSISTOR; SIC BJT; SILICON CARBIDE DEVICES;

SILICON CARBIDE;

EID: 49249128100     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926670     Document Type: Article

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