Fabrication of SiC microelectromechanical systems using one-step dry etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2998-3001

  Jiang, Liudi ^a   Cheung, R ^a   Hassan, M ^b   Harris, A J ^b   Burdess, J S ^b   Zorman, C A ^c   Mehregany, M ^c  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CANTILEVER BEAMS; CANTILEVER BRIDGES; CLAMPING DEVICES; COMPUTER SIMULATION; DRY ETCHING; EPITAXIAL GROWTH; INDUCTIVELY COUPLED PLASMA; MICROELECTROMECHANICAL DEVICES; MOLECULAR ORIENTATION; NATURAL FREQUENCIES; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; STRUCTURAL ANALYSIS; SURFACE TENSION; TENSILE STRESS;

WET ETCH PROCESSES;

SILICON CARBIDE;

EID: 0942300021     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1627804     Document Type: Conference Paper

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