A low-temperature CVD process for silicon carbide MEMS

Sensors and Actuators, A: Physical

Volumn 97-98, Issue , 2002, Pages 410-415

  Stoldt, Conrad R ^a   Carraro, Carlo ^a   Ashurst, W Robert ^a   Gao, Di ^a   Howe, Roger T ^a   Maboudian, Roya ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemical vapor deposition; MEMS; Resonators; Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COATING TECHNIQUES; FILM GROWTH; LOW TEMPERATURE OPERATIONS; MECHANICAL PROPERTIES; MICROSTRUCTURE; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SILICON CARBIDE; THERMAL EFFECTS;

COMPOSITE MICROSTRUCTURES; MICROFABRICATION PROCESS; POLYCRYSTALLINE CUBIC SILICON CARBIDE FILMS;

MICROELECTROMECHANICAL DEVICES;

EID: 0036544006     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00810-X     Document Type: Conference Paper

References (13)

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4. Novel low-temperature CVD process for silicon carbide MEMS
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6. Alkyltrichlorosilane-based self-assembled monolayer films for stiction reduction in silicon micromachines
7. Alkene-based monolayer films as anti-stiction coatings for polysilicon MEMS
8. Growth of 3C-SiC on on-axis Si(100) substrates by chemical vapor deposition
9. 2 masked Si(100): The effects of temperature
10. 4 by APCVD
11. Polysilicon microstructures to characterize static friction
12. Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
13. Determination of micromechanical properties of thin films by beam bending measurements with an atomic force microscope