Atomic structure determination of the Si-rich β-SiC(001) 3×2 surface by grazing-incidence x-ray diffraction: A stress-driven reconstruction

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  D'angelo M ^a   Enriquez, H ^a   Aristov, Y ^a,e   Soukiassian, P ^a   Renaud, G ^b   Barbier, A ^b   Noblet, M ^b   Chiang, S ^c   Semond, F ^d  

^a CEA SACLAY   (France)

^b CEA GRENOBLE   (France)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d CNRS   (France)

^e RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

AB INITIO CALCULATION; ARTICLE; CHEMICAL BINDING; CHEMICAL STRUCTURE; SURFACE PROPERTY; THEORETICAL MODEL; X RAY DIFFRACTION;

EID: 2442645503     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165321     Document Type: Article

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