Single-Source CVD of 3C-SiC Films in a LPCVD Reactor II. Reactor Modeling and Chemical Kinetics

Journal of the Electrochemical Society

Volumn 151, Issue 3, 2004, Pages

  Valente, Gianluca ^a   Wijesundara, Muthu B J ^b   Maboudian, Roya ^b   Carraro, Carlo ^a  

^a POLITECNICO DI MILANO   (Italy)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW RATES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

BOUNDARY CONDITIONS; CHEMICAL REACTORS; DECOMPOSITION; DIFFUSION; FILM GROWTH; PRESSURE DROP; REACTION KINETICS; SILICON CARBIDE; SILICON WAFERS; THERMODYNAMICS; THIN FILMS; VISCOUS FLOW;

CHEMICAL VAPOR DEPOSITION;

EID: 1842583239     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1646142     Document Type: Article

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