Correlation between epitaxial growth conditions of 3C-SiC thin films on Si and mechanical behavior of 3C-SiC self-suspended membranes

Sensors and Actuators, A: Physical

Volumn 99, Issue 1-2, 2002, Pages 31-34

  Gourbeyre, C ^a   Chassagne, T ^b   Le Berre, M ^a,c   Ferro, G ^b   Gautier, E ^a   Monteil, Y ^b   Barbier, D ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^c Tel: +33 472 43 89 98 ^*  (France)

Author keywords

3C SiC; Finite element modeling; Membranes; Residual stress

Indexed keywords

SELF-SUSPENDED MEMBRANES;

ATOMIC FORCE MICROSCOPY; CARBURIZING; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; MEMBRANES; SILICON CARBIDE; TENSILE STRESS; THERMOELASTICITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 0037197313     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00886-X     Document Type: Conference Paper

References (10)