Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 761-766

  Rowlette, Pieter C ^a   Allen, Cary G ^a   Bromley, Olivia B ^a   Wolden, Colin A ^a  

^a Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; DEFECT EMISSION; ELECTRICAL RESISTIVITY; FILM QUALITY; FILM STRUCTURE; HYDROXYL IMPURITIES; METAL PRECURSOR; ORDER OF MAGNITUDE; PLASMA EXPOSURE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE MORPHOLOGY; PULSED PLASMA; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SPECTROSCOPIC CHARACTERIZATION; SUBSTRATE TEMPERATURE; TEMPERATURE RANGE; ZNO;

ATOMIC SPECTROSCOPY; CARBON FILMS; DEPOSITION; DEPOSITION RATES; ELECTRIC RESISTANCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTOR GROWTH; VAPORS; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 67650287401     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3119673     Document Type: Article

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