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Chemical Vapor Deposition

Volumn 15, Issue 1-3, 2009, Pages 15-20

Plasma-enhanced atomic layer deposition of semiconductor grade ZnO using dimethyl zinc

(5) Rowlette, Pieter C a Allen, Cary G a Bromley, Olivia B a Dubetz, Amy E a Wolden, Colin A a

a Department of Geology and Geological Engineering (United States)

Author keywords

Atomic layer deposition (ALD); Dimethyl zinc; Plasma; Zinc oxide

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; ATOMS; CARBON FILMS; ELECTRIC RESISTANCE; ELECTRODEPOSITION; FILM GROWTH; MOLECULAR OXYGEN; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; WINDOWS; ZINC; ZINC OXIDE;

ATOMIC LAYER DEPOSITION (ALD); BAND-EDGE EMISSIONS; COMPOSITIONAL ANALYSIS; DIMETHYL ZINC; ELECTRICAL RESISTIVITIES; FILM STRUCTURES; GROWTH PER CYCLES; HYDROXYL IMPURITIES; LOW TEMPERATURES; METAL PRECURSORS; PLASMA EXPOSURES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITIONS; POLYCRYSTALLINE FILMS; PREFERRED ORIENTATIONS; PROCESS CONDITIONS; ROOM TEMPERATURES; ROOM-TEMPERATURE PHOTOLUMINESCENCES; SUBSTRATE TEMPERATURES; TEMPERATURE INCREASE; TEMPERATURE RANGES; ZINC OXIDE FILMS; ZNO;

OXIDE FILMS;

EID: 63449099241 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200806725 Document Type: Article

Times cited : (45)

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