Comparison between ZnO films grown by atomic layer deposition using H 2O or O3 as oxidant

Thin Solid Films

Volumn 478, Issue 1-2, 2005, Pages 103-108

  Kim, Seong Keun ^a   Hwang, Cheol Seong ^a   Park, Sang Hee Ko ^b   Yun, Sun Jin ^b  

^a Seoul National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Atomic layer deposition (ALD); Electrical properties; Ozone; Zinc oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRON BEAMS; IMPURITIES; OXIDATION; SUBSTRATES; ZINC OXIDE;

ATOMIC LAYER DEPOSITION (ALD); LIGANDS; PRECURSORS; WAVELENGTHS;

THIN FILMS;

EID: 14544295764     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.10.015     Document Type: Article

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