Revealing quantitative 3D chemical arrangement on Ge-Si nanostructures

Journal of Physical Chemistry C

Volumn 113, Issue 21, 2009, Pages 9018-9022

  Montoro, Luciano A ^a   Leite, Marina S ^a   Biggemann, Daniel ^a   Peternella, Fellipe G ^a   Batenburg, K Joost ^c   Medeiros Ribeiro, Gilberto ^a,b   Ramirez, Antonio J ^a  

^a LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; CHEMICAL COMPOSITIONS; CHEMICAL MAPS; CRYSTALLINE SYSTEMS; CRYSTALLOGRAPHIC ORIENTATIONS; EPITAXIAL ISLANDS; EPITAXIALLY GROWN; HETEROSTRUCTURES; HIGH SPATIAL RESOLUTION; ITERATIVE SIMULATION; LIMITED INFORMATION; QUANTUM DOT; SELF-ASSEMBLED; SI NANOSTRUCTURES; STRAINED-GE; TEM; THREE-DIMENSIONAL (3D);

ELECTRIC WIRE; ELECTRON MICROSCOPES; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GERMANIUM; NANOSTRUCTURES; SCANNING PROBE MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; THREE DIMENSIONAL;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 67649207403     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp902480w     Document Type: Article

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