Bulk lateral MEM resonator on thin SOI with high Q-factor

Journal of Microelectromechanical Systems

Volumn 18, Issue 2, 2009, Pages 466-479

  Grogg, Daniel ^a   Tekin, Huseyin Cumhur ^a   Ciressan Badila, Nicoleta Diana ^a   Tsamados, Dimitrios ^a   Mazza, Marco ^a,b   Ionescu, Adrian Mihai ^a  

^a EPFL   (Switzerland)

^b UNIVERSITY OF APPLIED SCIENCES WESTERN SWITZERLAND   (Switzerland)

Author keywords

Electrostatic devices; Frequency stability; MEM system (MEMS); Microelectromechanical (MEM) devices; Micromachining; Quality factor (Q); Resonators

Indexed keywords

A THERMALS; BULK MODES; DISK RESONATORS; EXPERIMENTAL CHARACTERISTICS; FABRICATION PROCESS; FREQUENCY DEPENDENCES; HARD MASKS; HIGH Q FACTORS; HIGH-QUALITY FACTORS; MEM RESONATORS; MICROELECTROMECHANICAL (MEM) DEVICES; MOTIONAL RESISTANCES; PARALLEL BEAMS; QUALITY FACTOR (Q); QUALITY FACTORS; REACTIVE-ION ETCHINGS; RECTANGULAR PLATES; RESONANCE FREQUENCIES; SOI SUBSTRATES; THERMAL SENSITIVITIES; THIN SOI; THIN-FILM SILICONS;

BANDPASS FILTERS; COMPOSITE MICROMECHANICS; ELECTROSTATIC DEVICES; ELECTROSTATICS; FABRICATION; FREQUENCY STABILITY; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; MOSFET DEVICES; Q FACTOR MEASUREMENT; REACTIVE ION ETCHING; RESONANCE; SILICA; SILICON OXIDES; SUBSTRATES;

RESONATORS;

EID: 67349264073     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2008.2011689     Document Type: Article

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