Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1394-1400

  Badila Ciressan, N D ^a   Mazza, M ^a   Grogg, D ^a   Ionescu, A M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS FILTERS; CMOS INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; MICROSENSORS; MOS CAPACITORS; MOSFET DEVICES; NONMETALS; OPTICAL DESIGN; Q FACTOR MEASUREMENT; RESONANCE; RESONATORS; SILICON;

AC POWER; AIR-GAPS; COMMUNICATION APPLICATIONS; CRYOGENIC TEMPERATURES; DC BIASING; EXPERIMENTAL INVESTIGATIONS; HIGH-QUALITY FACTORS; MICRO-ELECTRO-MECHANICAL; MOTIONAL RESISTANCE; NANO GAPS; PARTIALLY DEPLETED; QUALITY FACTOR; QUALITY FACTORS; RESONANCE FREQUENCIES; ROOM TEMPERATURES; SILICON-ON -INSULATOR; TEMPERATURE INFLUENCE; THIN SOI;

POWER QUALITY;

EID: 50349095484     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.022     Document Type: Article

References (15)

1. Nguyen C.T.-C., and Howe R.T. An integrated CMOS micromechanical resonator high-Q oscillator. IEEE JSSC 34 (1999)
2. Nguyen C.T.-C. Vibrating RF MEMS for low power communications. Proc MRS (2002) 741
3. Mattila T, Oja A, Seppä H, Jaakkola O. Micromechanical bulk acoustic wave resonator. In: Proceedings of IEEE ultrasonics symposium, 2002, pp. 945-8.
4. Badila-Ciressan N.-D., Hibert C., Mazza M., and Ionescu A.M. Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps. J Microsystem Technol 13 11 (2007)
5. Pourkamali S., and Ayazi F. SOI-based HF and VHF single-crystal silicon resonators with sub-100 nanometer vertical capacitive gaps. Transducers (2003) 837-840
6. Xia H., Ashruf C.M.A., French P.J., and Kelly J.J. Galvanic cell formation in silicon/metal contacts: the effect on silicon surface morphology. Chem Mater 12 (2000) 1671
7. Agarwal M., Park K., Candler R., Hopcroft M., Jha C., Melamud R., et al. Non-linearity cancellation in MEMS resonators for improved power-handling. IEDM (2005) 286-289
8. Kaajakari V., Mattila T., Oja A., and Seppä H. Nonlinear limits for single-crystal silicon microresonators. IEEE JMEMS 13 5 (2004) 715-724
9. Wachtman Jr. J.B., Tefft W.E., Lam Jr. D.G., and Apstein C.S. Exponential temperature dependence of Young's modulus for several oxides. Phys Rev 23 (1961) 122-1754
10. Gysin U., Rast S., Ruff P., Meyer E., Lee D.-W., Vettiger P., et al. Temperature dependence of the force sensitivity of silicon cantilevers. Phys Rev B 69 4 (2004) [id. 045403]
11. Reid S., Cagnoli G., Crooks D.R.M., Hough J., Murray P., Rowan S., Fejer M.M., Route R., and Zappe S. Mechanical dissipation in silicon flexures. Phys Lett A 351 4-5 (2006) 205-211
12. Hsu W-T, Clark JR, Nguyen CT-C. Mechanically temperature-compensated flexural-mode micromechanical resonators, Technical digest. In: IEEE international electron devices meeting, San Francisco, California, December 11-13, 2000, pp. 399-402.
13. Yasumura K.Y., Stowe T.D., Chow E.M., Pfafman T., Kenny T.W., Stipe B.C., et al. Quality factors in micron- and submicron-thick cantilevers. J MEMS 9 (2000) 117-125
14. Olkhovets A., Evoy S., Carr D.W., Parpia J.M., and Craighead H.G. Actuation and internal friction of torsional nanomechanical silicon resonators. J Vacuum Sci Technol B: Microelectr Nanometer Struct 18 6 (2000) 3549-3551
15. Nowick A.S., and Berry B.S. Anelastic relaxation in crystalline solids (1972), Academic Press, New York