Assessment of threshold switching dynamics in phase-change chalcogenide memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 877-880

  Ielmini, D ^a   Lacaita, A L ^c   Mantegazza, D ^a   Pellizzer, F ^b   Pirovano, A ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHALCOGENIDES; ELECTRONIC PROPERTIES; SWITCHING CIRCUITS; THRESHOLD VOLTAGE;

OFF-STATE RESISTANCE; THRESHOLD SWITCHING DYNAMICS; THRESHOLD SWITCHING MODELS; TIME EVOLUTION;

PHASE CHANGE MEMORY;

EID: 33847708677     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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