Intrinsic data retention in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3040-3046

  Redaelli, Andrea ^a,b   Ielmini, Daniele ^a,b   Russo, Ugo ^b   Lacaita, Andrea L ^a,b  

^a IEEE   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Amorphous semiconductors; Chalcogenide; Crystal growth; Nonvolatile memories; Phase change memory (PCM)

Indexed keywords

DATA RETENTION; PCM LARGE ARRAYS; STATISTICAL PREDICTION;

AMORPHOUS SEMICONDUCTORS; CHALCOGENIDES; CRYSTAL GROWTH; CRYSTALLIZATION; DATA REDUCTION; NANOTECHNOLOGY; NONVOLATILE STORAGE; PERCOLATION (COMPUTER STORAGE); STATISTICAL METHODS;

PHASE CHANGE MEMORY;

EID: 33847607700     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885525     Document Type: Article

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