-
1
-
-
34548814469
-
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/S Read Throughput
-
Feb
-
K.-J. Lee, B.-H. Cho, W.-Y. Cho et al., "A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/S Read Throughput", ISSCC, Dig. Tech. Papers, pp. 472-473, Feb. 2007.
-
(2007)
ISSCC, Dig. Tech. Papers
, pp. 472-473
-
-
Lee, K.-J.1
Cho, B.-H.2
Cho, W.-Y.3
-
2
-
-
33846200591
-
A 0.1μm 1.8V 256Mb 66MHz Synchronous Burst PRAM
-
Feb
-
S. Kang, W. Cho, B.-H. Cho et al., "A 0.1μm 1.8V 256Mb 66MHz Synchronous Burst PRAM", ISSCC. Dig. Tech. Papers, pp. 140-141, Feb. 2006.
-
(2006)
ISSCC. Dig. Tech. Papers
, pp. 140-141
-
-
Kang, S.1
Cho, W.2
Cho, B.-H.3
-
3
-
-
41149134446
-
A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Application
-
F. Pellizzer, A. Benvenuti, B. Gleixner et al., "A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Application", Symp. VLSI Technology, pp. 150-151, 2006.
-
(2006)
Symp. VLSI Technology
, pp. 150-151
-
-
Pellizzer, F.1
Benvenuti, A.2
Gleixner, B.3
-
4
-
-
28144433029
-
Enhanced Write Performance of a 64Mb Phase-Change Random Access Memory
-
Feb
-
H.-R. Oh, B.-H. Cho, W.-Y. Cho et al., "Enhanced Write Performance of a 64Mb Phase-Change Random Access Memory", ISSCC, Dig. Tech. Papers, pp. 48-49, Feb. 2005.
-
(2005)
ISSCC, Dig. Tech. Papers
, pp. 48-49
-
-
Oh, H.-R.1
Cho, B.-H.2
Cho, W.-Y.3
-
5
-
-
33751334352
-
Current Status of Chalcogenide Phase Change Memory
-
Jun
-
G. Atwood and R. Bez, "Current Status of Chalcogenide Phase Change Memory", Device Research Conf. Dig., pp. 29-33, Jun. 2005.
-
(2005)
Device Research Conf. Dig
, pp. 29-33
-
-
Atwood, G.1
Bez, R.2
-
6
-
-
4544229593
-
Novel Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications
-
Jun
-
F. Pellizzer, A. Pirovano, F. Ottogalli et al., "Novel Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications", Dig. Symp. VLSI Technology, pp. 18-19, Jun. 2004.
-
(2004)
Dig. Symp. VLSI Technology
, pp. 18-19
-
-
Pellizzer, F.1
Pirovano, A.2
Ottogalli, F.3
-
7
-
-
33751396144
-
μTrench Phase-Change Memory Cell Engineering and Optimization
-
Sep
-
A. Pirovano, F. Pellizzer, A. Redaelli et al., "μTrench Phase-Change Memory Cell Engineering and Optimization", Proc. ESSDERC, pp. 313-316, Sep. 2005.
-
(2005)
Proc. ESSDERC
, pp. 313-316
-
-
Pirovano, A.1
Pellizzer, F.2
Redaelli, A.3
-
8
-
-
39549122991
-
Self-Aligned μTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond
-
Sep
-
A. Pirovano, F. Pellizzer, I. Tortorelli et al., "Self-Aligned μTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond", Proc. ESSDERC, Sep. 2007.
-
(2007)
Proc. ESSDERC
-
-
Pirovano, A.1
Pellizzer, F.2
Tortorelli, I.3
-
9
-
-
4544337857
-
An 8Mb demonstrator for high-density 1.8V Phase Change Memories
-
F. Bedeschi, C. Resta, O. Khouri et al., "An 8Mb demonstrator for high-density 1.8V Phase Change Memories", Symp. VLSI Circuits, pp. 442-445, 2004.
-
(2004)
Symp. VLSI Circuits
, pp. 442-445
-
-
Bedeschi, F.1
Resta, C.2
Khouri, O.3
-
10
-
-
34548758518
-
Data Retention Characterization of Phase-Change Memory Arrays
-
Apr
-
B. Gleixner, A. Pirovano, J. Sarkar et al., "Data Retention Characterization of Phase-Change Memory Arrays," Proc. IRPS, pp. 542-546, Apr. 2007.
-
(2007)
Proc. IRPS
, pp. 542-546
-
-
Gleixner, B.1
Pirovano, A.2
Sarkar, J.3
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