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Volumn 51, Issue , 2008, Pages 428-625

A multi-level-cell bipolar-selected phase-change memory

Author keywords

[No Author keywords available]

Indexed keywords

NETWORKS (CIRCUITS); SOLID STATE DEVICES;

EID: 49549091783     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523240     Document Type: Conference Paper
Times cited : (116)

References (10)
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    • Feb
    • K.-J. Lee, B.-H. Cho, W.-Y. Cho et al., "A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/S Read Throughput", ISSCC, Dig. Tech. Papers, pp. 472-473, Feb. 2007.
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    • Lee, K.-J.1    Cho, B.-H.2    Cho, W.-Y.3
  • 2
    • 33846200591 scopus 로고    scopus 로고
    • A 0.1μm 1.8V 256Mb 66MHz Synchronous Burst PRAM
    • Feb
    • S. Kang, W. Cho, B.-H. Cho et al., "A 0.1μm 1.8V 256Mb 66MHz Synchronous Burst PRAM", ISSCC. Dig. Tech. Papers, pp. 140-141, Feb. 2006.
    • (2006) ISSCC. Dig. Tech. Papers , pp. 140-141
    • Kang, S.1    Cho, W.2    Cho, B.-H.3
  • 3
    • 41149134446 scopus 로고    scopus 로고
    • A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Application
    • F. Pellizzer, A. Benvenuti, B. Gleixner et al., "A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Application", Symp. VLSI Technology, pp. 150-151, 2006.
    • (2006) Symp. VLSI Technology , pp. 150-151
    • Pellizzer, F.1    Benvenuti, A.2    Gleixner, B.3
  • 4
    • 28144433029 scopus 로고    scopus 로고
    • Enhanced Write Performance of a 64Mb Phase-Change Random Access Memory
    • Feb
    • H.-R. Oh, B.-H. Cho, W.-Y. Cho et al., "Enhanced Write Performance of a 64Mb Phase-Change Random Access Memory", ISSCC, Dig. Tech. Papers, pp. 48-49, Feb. 2005.
    • (2005) ISSCC, Dig. Tech. Papers , pp. 48-49
    • Oh, H.-R.1    Cho, B.-H.2    Cho, W.-Y.3
  • 5
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    • Current Status of Chalcogenide Phase Change Memory
    • Jun
    • G. Atwood and R. Bez, "Current Status of Chalcogenide Phase Change Memory", Device Research Conf. Dig., pp. 29-33, Jun. 2005.
    • (2005) Device Research Conf. Dig , pp. 29-33
    • Atwood, G.1    Bez, R.2
  • 6
    • 4544229593 scopus 로고    scopus 로고
    • Novel Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications
    • Jun
    • F. Pellizzer, A. Pirovano, F. Ottogalli et al., "Novel Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications", Dig. Symp. VLSI Technology, pp. 18-19, Jun. 2004.
    • (2004) Dig. Symp. VLSI Technology , pp. 18-19
    • Pellizzer, F.1    Pirovano, A.2    Ottogalli, F.3
  • 7
    • 33751396144 scopus 로고    scopus 로고
    • μTrench Phase-Change Memory Cell Engineering and Optimization
    • Sep
    • A. Pirovano, F. Pellizzer, A. Redaelli et al., "μTrench Phase-Change Memory Cell Engineering and Optimization", Proc. ESSDERC, pp. 313-316, Sep. 2005.
    • (2005) Proc. ESSDERC , pp. 313-316
    • Pirovano, A.1    Pellizzer, F.2    Redaelli, A.3
  • 8
    • 39549122991 scopus 로고    scopus 로고
    • Self-Aligned μTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond
    • Sep
    • A. Pirovano, F. Pellizzer, I. Tortorelli et al., "Self-Aligned μTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond", Proc. ESSDERC, Sep. 2007.
    • (2007) Proc. ESSDERC
    • Pirovano, A.1    Pellizzer, F.2    Tortorelli, I.3
  • 9
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    • An 8Mb demonstrator for high-density 1.8V Phase Change Memories
    • F. Bedeschi, C. Resta, O. Khouri et al., "An 8Mb demonstrator for high-density 1.8V Phase Change Memories", Symp. VLSI Circuits, pp. 442-445, 2004.
    • (2004) Symp. VLSI Circuits , pp. 442-445
    • Bedeschi, F.1    Resta, C.2    Khouri, O.3
  • 10
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    • Data Retention Characterization of Phase-Change Memory Arrays
    • Apr
    • B. Gleixner, A. Pirovano, J. Sarkar et al., "Data Retention Characterization of Phase-Change Memory Arrays," Proc. IRPS, pp. 542-546, Apr. 2007.
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    • Gleixner, B.1    Pirovano, A.2    Sarkar, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.