Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 597-603

  Ielmini, D ^a   Sharma, D ^a   Lavizzari, S ^a   Lacaita, A L ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Chalcogenide; Data retention; Phase change memory

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLIZATION; EXTRAPOLATION; MOBILE TELECOMMUNICATION SYSTEMS; MODELS; NANOCRYSTALLINE ALLOYS; PULSE CODE MODULATION; RELIABILITY; RELIABILITY THEORY; STRUCTURAL RELAXATION;

AMORPHOUS PHASE; CHALCOGENIDE; DATA RETENTION;

PHASE CHANGE MEMORY;

EID: 51549099818     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558952     Document Type: Conference Paper

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