Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part II: Physics-Based Modeling

IEEE Transactions on Electron Devices

Volumn 56, Issue 5, 2009, Pages 1078-1085

  Lavizzari, Simone ^a   Ielmini, Danielel ^a   Sharma, Deepak ^a   Lacaita, Andrea L ^b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

Amorphous semiconductors; Chalcogenide materials; Nonvolatile memory; Phase change memory (PCM); Reliability estimation

Indexed keywords

AMORPHOUS CHALCOGENIDE; AMORPHOUS PHASE; ANNEALING TIME; ATOMIC SCALE; CHALCOGENIDE MATERIALS; DEFECT ANNIHILATION; DEVICE RELIABILITY; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; IN-PHASE; NONVOLATILE MEMORY; PHASE-CHANGE MEMORY (PCM); PHYSICAL MODEL; PHYSICS-BASED MODELING; PHYSICS-BASED MODELS; RELIABILITY ESTIMATION; RELIABILITY IMPACTS; STRUCTURE RELAXATION;

AMORPHOUS SEMICONDUCTORS; PULSE CODE MODULATION; RELIABILITY;

PHASE CHANGE MEMORY;

EID: 67349157165     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2016398     Document Type: Article

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