Structural Relaxation of Amorphous Silicon Carbide

Physical Review Letters

Volumn 89, Issue 5, 2002, Pages

  Ishimaru, Manabu ^a   Bae, In Tae ^a   Hirotsu, Yoshihiko ^a   Matsumura, Syo ^b   Sickafus, Kurt E ^c  

^a OSAKA UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL BONDS; CHEMICAL RELAXATION; COMPUTER SIMULATION; FUNCTIONS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

HETERONUCLEAR BONDS; HOMONUCLEAR BONDS; RADIAL DISTRIBUTION FUNCTIONS; STRUCTURAL RELAXATION;

SILICON CARBIDE;

EID: 4043178681     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.055502     Document Type: Article

References (26)

1. W. Bolse, Nucl. Instrum. Methods Phys Res., Sect. B 148, 83 (1999).
2. P. Mélinon, P. Kéghélian, A. Perez, J.L. Rousset, A.M. Cadrot, A. Malhomme, A.J. Renouprez, and F.J. Cadete Santos Aires, Philos. Mag. A 80, 143 (2000).
3. P. Musumeci, F. Roccaforte, and R. Reitano, Europhys. Lett. 55, 674 (2001).
4. C. Serre, L. Calvo-Barrio, A. Pérez-Rodríguez, A. Romano-Rodríguez, J.R. Morante, Y. Pacaud, R. Kögler, V. Heera, and W. Skorupa, J. Appl. Phys. 79, 6907 (1996).
5. T. Takeshita, Y. Kurata, and S. Hasegawa, J. Appl. Phys. 71, 5395 (1992).
6. A.E. Kaloyeros, R.B. Rizk, and J.B. Woodhouse, Phys. Rev. B 38, 13?099 (1988).
7. J. Bentley, P. Angelini, A.P. Gove, P.S. Sklad, and A.T. Fisher, Inst. Phys. Conf. Ser. 98, 107 (1989).
8. F. Finochhi, G. Galli, M. Parrinello, and C.M. Bertoni, Phys. Rev. Lett.10.1103/PhysRevLett.68.3044 68, 3044 (1992).
9. P. Musumeci, R. Reitano, L. Calcagno, F. Roccaforte, A. Makhtari, and M.G. Grimaldi, Philos. Mag. B 76, 323 (1997).
10. P. Musumeci, L. Calcagno, and A. Makhtari, Mater. Sci. Eng. AMSAPE3 253, 296 (1998).
11. J.F. Ziegler, J.P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
12. N. Mori, T. Oikawa, T. Katoh, J. Miyahara, and Y. Harada, UltramicroscopyULTRD6 25, 195 (1988).
13. T. Ohkubo, T. Hiroshima, Y. Hirotsu, A. Inoue, and T. Oikawa, Mater. Trans. JIM 41, 1385 (2000).
14. Y. Hirotsu, M. Ishimaru, T. Ohkubo, T. Hanada, and M. Sugiyama, J. Electron Microsc.JELJA7 50, 435 (2001).
15. M. Ishimaru, Y. Hirotsu, I.V. Afanasyev-Charkin, and K.E. Sickafus, J. Phys. Condens. Matter 14, 1237 (2002).
16. V. Heera, F. Prokert, N. Schell, H. Seifarth, W. Fukarek, M. Voelskow, and W. Skorupa, Appl. Phys. Lett. 70, 3531 (1997).
17. A. Höfgen, V. Heera, F. Eichhorn, and W. Skorupa, J. Appl. Phys. 84, 4769 (1998).
18. A. Sproul, D.R. McKenzie, and D.J.H. Cookayne, Philos. Mag. B 54, 113 (1986).
19. C. Meneghini, S. Pascarelli, F. Boscherini, S. Mobilio, and F. Evangelisti, J. Non-Cryst. Solids 137/138, 75 (1991).
20. D. Mura, L. Colombo, R. Bertoncini, and G. Mula, Phys. Rev. B 58, 10?357 (1998).
21. F. Gao and W.J. Weber, J. Appl. Phys. 89, 4275 (2001).
22. The validity of the Tersoff potential for covalent materials is described in the following articles: M. Ishimaru, K. Yoshida, and T. Motooka, Phys. Rev. B10.1103/PhysRevB.53.7176 53, 7176 (1996);
23. M. Ishimaru, K. Yoshida, T. Kumamoto, and T. Motooka, Phys. Rev. B10.1103/PhysRevB.54.4638 54, 4638 (1996).
24. M. Ishimaru, S. Munetoh, and T. Motooka, Phys. Rev. B 56, 15?133 (1997).
25. M. Ishimaru, J. Phys. Condens. Matter 13, 4181 (2001).
26. M. Ishimaru, J. Appl. Phys. 91, 686 (2002).