Transient effects of delay, switching and recovery in phase change memory (PCM) devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Lavizzari, S ^a   Ielmini, D ^a   Sharma, D ^a   Lacaita, A L ^b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

IN-PHASE; READ DISTURB; READ OPERATIONS; THRESHOLD SWITCHING; TRANSIENT EFFECTS;

ELECTRON DEVICES; METAL RECOVERY; PULSE CODE MODULATION;

PHASE CHANGE MEMORY;

EID: 64549099337     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796655     Document Type: Conference Paper

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