Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 544-547

  Amat, E ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a   Stathis, J H ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; PERMITTIVITY; STRESS ANALYSIS;

DIELECTRIC DEGRADATION; DYNAMIC STRESS; INTERFACIAL LAYERS; STATIC STRESS;

SILICA;

EID: 34247151162     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.003     Document Type: Article

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