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Applied Surface Science

Volumn 187, Issue 3-4, 2002, Pages 297-304

Pulsed laser deposition of TiO 2 for MOS gate dielectric

(10) Paily, Roy a DasGupta, Amitava a DasGupta, Nandita a Bhattacharya, Pijush b Misra, Pankaj b Ganguli, Tapas b Kukreja, Lalit M b Balamurugan, A K c Rajagopalan, S c Tyagi, A K c

a INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

c INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

Author keywords

Alternative high k dielectrics; Gate dielectrics; MOS devices; Pulsed laser deposition

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY; TITANIUM DIOXIDE; VLSI CIRCUITS;

EQUIVALENT DIELECTRIC THICKNESS (EDT);

MOS DEVICES;

EID: 0037186032 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)01040-6 Document Type: Article

Times cited : (64)

References (17)

1
- 0002705635
- (1998) Intel Technol. J. , vol.Q398 , pp. 1
- Thompson, S.¹ Packan, P.² Bohr, M.T.³

2
- 0003552056
- Semiconductor Industry Association, San Jose, CA
- (1997) The National Technology Roadmap for Semiconductors, 3rd Edition

3
- 0032680398
- (1999) IBM J. Res. Dev. , vol.43 , pp. 245
- Buchanan, D.A.¹

4
- 0032645835
- (1999) IBM J. Res. Dev. , vol.43 , pp. 383
- Campbell, S.A.¹ Kim, H.S.² Gilmer, D.C.³ He, B.⁴ Ma, T.⁵ Gladfelter, W.L.⁶

5
- 0031248339
- (1997) Microelectron. Reliab. , vol.37 , pp. 1499
- Vincent, E.¹ Bruyère, S.² Papadas, C.³ Mortini, P.⁴

6
- 0001158030
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3860
- Kim, H.S.¹ Gilmer, D.C.² Polla, D.L.³

7
- 0030865462
- (1997) IEEE Trans. Electron. Devices , vol.44 , pp. 104
- Campbell, S.A.¹ Gilmer, D.C.² Wang, X.C.³ Hsieh, M.T.⁴ Kim, H.S.⁵ Gladfelter, W.⁶ Yan, J.⁷

8
- 0032165959
- (1998) IEEE ED Lett. , vol.19 , pp. 341
- Lu, Q.¹ Park, D.² Kalnitsky, A.³ Chang, C.⁴ Cheng, C.-C.⁵ Tay, S.P.⁶ King, T.-J.⁷ Hu, C.⁸

9
- 0034317663
- (2000) IEEE ED Lett. , vol.21 , pp. 537
- Yu, J.C.¹ Lai, B.C.² Lee, J.Y.³

10
- 0032024519
- (1998) IEEE Trans. Electron. Devices , vol.45 , pp. 680
- Ma, T.P.¹

11
- 30844455436
- (1988) CRC Crit. Rev. Solid State Mater. Sci. , vol.15 , pp. 63
- Cheung, J.T.¹ Sankur, H.²

12
- 0001866450
- Commercial scale-up of pulsed laser deposition
- D.B. Chrisey, G.K. Hubler (Eds.), Wiley, New York
- (1994) Pulsed Laser Deposition of Thin Films , pp. 293-311
- Greer, J.A.¹

13
- 0014800514
- (1970) RCA Rev. , vol.31 , pp. 187
- Kern, W.¹ Puotinen, D.²

14
- 0032483894
- (1998) Thin Solid Films , vol.334 , pp. 109
- Yokota, K.¹ Yamada, T.² Miyashita, F.³ Hirai, K.⁴ Takano, H.⁵ Kumagai, M.⁶

15
- 0003610719
- Wiley, New York
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology , pp. 325
- Nicollian, E.H.¹ Brews, J.R.²

16
- 0031625563
- (1998) Microelectron. Reliab. , vol.38 , pp. 37
- Martin, A.¹ O'Sullivan, P.² Mathewson, A.³

17
- 0003748504
- Wiley, New York
- (1990) High-speed Semiconductor Devices , pp. 153
- Sze, S.M.¹

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