Silicon oxide/silicon nitride dual-layer films: A stacked gate dielectric for the 21st century

Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 26-37

  Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOSFET DEVICES; NITRIDING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SILICA; SILICON NITRIDE; SILICON WAFERS; ULTRATHIN FILMS;

DUAL LAYER FILMS; STACKED GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 0032646405     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00432-9     Document Type: Article

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