Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

Thin Solid Films

Volumn 496, Issue 2, 2006, Pages 546-554

  Tinoco, J C ^a,b   Estrada, M ^a   Baez, H ^a   Cerdeira, A ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSIDAD DE SAN MARTÍN DE PORRES   (Peru)

Author keywords

Dielectric films; Metal Oxide Semiconductor structures; Plasma oxidation; Silicon oxide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; MOS DEVICES; PERMITTIVITY; PLASMAS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; ULTRATHIN FILMS;

PLASMA OXIDATION; REACTIVE GASES; SILICON OXIDE; THERMAL OXIDE FILMS;

OXIDATION;

EID: 28044447444     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.351     Document Type: Article

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