Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 501-504

  Song, Zhaorui ^a   Cheng, Xinhong ^b   Zhang, Enxia ^a   Xing, Yumei ^a   Shen, Qinwo ^a   Yu, Yuehui ^a   Zhang, Zhengxuan ^a   Wang, Xi ^a   Shen, Dashen ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b WENZHOU UNIVERSITY   (China)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

High k HfON dielectric film; Interface trap charge; Oxide or nitride trap charge; Total dose radiation response

Indexed keywords

CRYSTAL STRUCTURE; DIELECTRIC FILMS; HAFNIUM; RADIATION EFFECTS; X RAY DIFFRACTION;

HIGH-K HFON DIELECTRIC FILM; INTERFACE TRAP CHARGE; NITRIDE TRAP CHARGE; TOTAL-DOSE RADIATION RESPONSE;

NITROGEN;

EID: 33947629072     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.038     Document Type: Article

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