Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics

Microelectronics Reliability

Volumn 41, Issue 4, 2001, Pages 587-595

  Eriguchi, Koji ^a   Harada, Yoshinao ^a   Niwa, Masaaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; STRESS ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

STACK GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0035310399     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00247-X     Document Type: Article

References (16)

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3. 3-Nitrided
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5. CMOS metal replacement gate transistors using tantalum pentoxide gate insulator
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7. ox,eq < 10 A
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15. 2-Si interface on electrical characteristics of ultrathin gate oxides