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Applied Physics A: Materials Science and Processing

Volumn 96, Issue 1, 2009, Pages 259-269

Improvement of electrical properties of silicon-based thin-film transistors by modifying technological fabrication processes

(2) Bonnaud, Olivier a Mohammed Brahim, Tayeb a

a UNIVERSITÉ DE RENNES 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AIR-GAP; CHANNEL MATERIALS; DENSITY OF STATE; DEPOSITION TECHNIQUE; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; FABRICATION PROCESS; FIELD-EFFECT MOBILITIES; FLEXIBLE SUBSTRATE; GATE INSULATOR; GLASS SUBSTRATES; LASER CRYSTALLIZATION; MATERIAL QUALITY; SILICON GERMANIUM; SILICON-BASED; SOLID-PHASE; SUBTHRESHOLD SLOPE; TECHNOLOGICAL PROCESS;

DRAIN CURRENT; ELECTRIC PROPERTIES; GERMANIUM; GERMANIUM COMPOUNDS; GLASS; PHASE INTERFACES; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

SUBSTRATES;

EID: 67349217356 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4987-z Document Type: Article

Times cited : (8)

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