-
1
-
-
0003637340
-
A method of measuring specific resistivity and Hall effect of discs of arbitrary shape
-
Van Der Pauw L.J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. 13:1958;1-9.
-
(1958)
Philips Res. Rep.
, vol.13
, pp. 1-9
-
-
Van Der Pauw, L.J.1
-
3
-
-
0026896731
-
A 3-D vertical hall magnetic-field sensor in CMOS technology
-
Paranjape M., Filanovsky I., Ristic Lj. A 3-D vertical hall magnetic-field sensor in CMOS technology. Sens. Actuators A. 34:1992;9-14.
-
(1992)
Sens. Actuators a
, vol.34
, pp. 9-14
-
-
Paranjape, M.1
Filanovsky, I.2
Ristic, Lj.3
-
6
-
-
36549093640
-
Two-dimensional electron gas magnetic field sensor
-
Heremans J., Partin D.L., Morelli D.T., Fuller B.K., Thrush C.M. Two-dimensional electron gas magnetic field sensor. Appl. Phys. Lett. 57:1990;291-293.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 291-293
-
-
Heremans, J.1
Partin, D.L.2
Morelli, D.T.3
Fuller, B.K.4
Thrush, C.M.5
-
7
-
-
0022768090
-
Integrated semiconductor magnetic field sensor
-
Baltes H.P., Popovic R.S. Integrated semiconductor magnetic field sensor. Proc. IEEE. 74:1986;1107-1132.
-
(1986)
Proc. IEEE
, vol.74
, pp. 1107-1132
-
-
Baltes, H.P.1
Popovic, R.S.2
-
8
-
-
0025699062
-
3-D magnetic field sensor realized as a lateral magnetotransistor in CMOS technology
-
Ristic Lj., Doan M., Paranjape M. 3-D magnetic field sensor realized as a lateral magnetotransistor in CMOS technology. Sens. Actuators. A21-A23:1990;770-775.
-
(1990)
Sens. Actuators
, vol.2123
, pp. 770-775
-
-
Ristic, Lj.1
Doan, M.2
Paranjape, M.3
-
9
-
-
0000671422
-
The geometrical influence of rectangular semiconductor plates on the Hall effect (in German)
-
Lippman H.J., Kuhrt F. The geometrical influence of rectangular semiconductor plates on the Hall effect (in German). Z. Naturforsch. 13:1958;474-483.
-
(1958)
Z. Naturforsch
, vol.13
, pp. 474-483
-
-
Lippman, H.J.1
Kuhrt, F.2
-
10
-
-
0003651237
-
N-type polycrystalline silicon films obtained by crystallization of in situ phosphorus-doped amorphous silicon films deposited at low pressure
-
Sarret M., Liba A., Le Bihan F., Joubert P., Fortin B. N-type polycrystalline silicon films obtained by crystallization of in situ phosphorus-doped amorphous silicon films deposited at low pressure. J. Appl. Phys. 76:1994;5492-5497.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 5492-5497
-
-
Sarret, M.1
Liba, A.2
Le Bihan, F.3
Joubert, P.4
Fortin, B.5
-
11
-
-
0031153326
-
Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements
-
Le Bihan F., Fortin B., Cauneau S., Briand D., Bonnaud O. Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements. Thin Solid Films. 301:1997;230-235.
-
(1997)
Thin Solid Films
, vol.301
, pp. 230-235
-
-
Le Bihan, F.1
Fortin, B.2
Cauneau, S.3
Briand, D.4
Bonnaud, O.5
-
12
-
-
0016597193
-
Electrical properties of polycrystalline silicon films
-
Seto J.Y.W. Electrical properties of polycrystalline silicon films. J. Appl. Phys. 46:1975;5247-5254.
-
(1975)
J. Appl. Phys.
, vol.46
, pp. 5247-5254
-
-
Seto, J.Y.W.1
-
13
-
-
0001395625
-
Electron mobility studies in surface space-charge layers in vapor-deposited CdS films
-
Waxman A., Henrich V.E., Shallcross F.V., Borkan H., Weimer P.K. Electron mobility studies in surface space-charge layers in vapor-deposited CdS films. J. Appl. Phys. 36:1965;168-175.
-
(1965)
J. Appl. Phys.
, vol.36
, pp. 168-175
-
-
Waxman, A.1
Henrich, V.E.2
Shallcross, F.V.3
Borkan, H.4
Weimer, P.K.5
-
14
-
-
0003579922
-
A metal-oxide-semiconductor (MOS) Hall element
-
Gallagher R.C., Corak W.S. A metal-oxide-semiconductor (MOS) Hall element. Solid-State Electron. 9:1966;571-580.
-
(1966)
Solid-State Electron.
, vol.9
, pp. 571-580
-
-
Gallagher, R.C.1
Corak, W.S.2
-
15
-
-
0026851516
-
Si MAGFETs optimized for sensitivity and noise properties
-
Mathieu N., Giordano P., Chovet A. Si MAGFETs optimized for sensitivity and noise properties. Sens. Actuators A. 32:1992;656-660.
-
(1992)
Sens. Actuators a
, vol.32
, pp. 656-660
-
-
Mathieu, N.1
Giordano, P.2
Chovet, A.3
-
16
-
-
0026817614
-
Electrical analysis of high mobility poly-Si TFT's made from laser-irradiated sputtered Si Films
-
Shirai S., Serikawa T. Electrical analysis of high mobility poly-Si TFT's made from laser-irradiated sputtered Si Films. IEEE Trans. Electron. Devices. 39:1992;450-452.
-
(1992)
IEEE Trans. Electron. Devices
, vol.39
, pp. 450-452
-
-
Shirai, S.1
Serikawa, T.2
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