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Volumn 88, Issue 2, 2001, Pages 133-138

Realization of polycrystalline silicon magnetic sensors

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT DEVICES; MAGNETIC FIELD EFFECTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; THIN FILM TRANSISTORS;

EID: 0035251397     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00506-9     Document Type: Article
Times cited : (36)

References (17)
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    • Yang H.-M., Lei T.-F., Huang Y.-C., Lee C.-L. MOS magnetic current sensor based on standard CMOS process. Electron. Lett. 33:1997;601-602.
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  • 7
    • 0022768090 scopus 로고
    • Integrated semiconductor magnetic field sensor
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    • (1986) Proc. IEEE , vol.74 , pp. 1107-1132
    • Baltes, H.P.1    Popovic, R.S.2
  • 8
    • 0025699062 scopus 로고
    • 3-D magnetic field sensor realized as a lateral magnetotransistor in CMOS technology
    • Ristic Lj., Doan M., Paranjape M. 3-D magnetic field sensor realized as a lateral magnetotransistor in CMOS technology. Sens. Actuators. A21-A23:1990;770-775.
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  • 9
    • 0000671422 scopus 로고
    • The geometrical influence of rectangular semiconductor plates on the Hall effect (in German)
    • Lippman H.J., Kuhrt F. The geometrical influence of rectangular semiconductor plates on the Hall effect (in German). Z. Naturforsch. 13:1958;474-483.
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    • Lippman, H.J.1    Kuhrt, F.2
  • 10
    • 0003651237 scopus 로고
    • N-type polycrystalline silicon films obtained by crystallization of in situ phosphorus-doped amorphous silicon films deposited at low pressure
    • Sarret M., Liba A., Le Bihan F., Joubert P., Fortin B. N-type polycrystalline silicon films obtained by crystallization of in situ phosphorus-doped amorphous silicon films deposited at low pressure. J. Appl. Phys. 76:1994;5492-5497.
    • (1994) J. Appl. Phys. , vol.76 , pp. 5492-5497
    • Sarret, M.1    Liba, A.2    Le Bihan, F.3    Joubert, P.4    Fortin, B.5
  • 11
    • 0031153326 scopus 로고    scopus 로고
    • Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements
    • Le Bihan F., Fortin B., Cauneau S., Briand D., Bonnaud O. Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements. Thin Solid Films. 301:1997;230-235.
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  • 12
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    • Electrical properties of polycrystalline silicon films
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    • Electron mobility studies in surface space-charge layers in vapor-deposited CdS films
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  • 16
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    • Shirai, S.1    Serikawa, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.