Highly pH sensitive suspended-gate silicon thin film transistor (ISTFT)

Proceedings - Electrochemical Society

Volumn PV 2004-15, Issue , 2005, Pages 284-288

  Bendriaa, F ^a   Le Bihan, F ^a   Salaun A C ^a   Mohammed Brahim, T ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); PH EFFECTS; POLYSILICON; SILICON NITRIDE;

ION SENSITIVE FIELD EFFECT TRANSISTORS (ISFET); LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NERNSTIAN SENSITIVITY;

THIN FILM TRANSISTORS;

EID: 28844493226     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. H. Mahfoz-Kotb, A.C. Salaün, T. Mohammed-Brahim, O. Bonnaud, IEEE Trans. Electr. Dev. Lett. 24, 165 (2003)
4. H. Mahfoz-Kotb, A.C. Salaün, T. Mohammed-Brahim, O. Bonnaud, Sensors and Actuators A113, 344 (2004)
5. Mahfoz-Kotb H.; Salaün A-C.; Mohammed-Brahim T.; Le Bihan F.; El-Marssi M.; Thin Solid Films, 427; pp. 422-426 (2003)