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Volumn 4, Issue 5, 2004, Pages 597-602

Hall effect magnetic sensors based on polysilicon TFTs

Author keywords

Hall sensor; Large position sensors; Offset voltage; Polycrystalline silicon; Thin film transistors

Indexed keywords

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HALL EFFECT; MORPHOLOGY; POLYSILICON; SENSITIVITY ANALYSIS; THIN FILM TRANSISTORS;

EID: 4544327053     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2004.833497     Document Type: Article
Times cited : (19)

References (11)
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    • in German
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    • Lippmann, H.J.1    Kuhrt, F.2
  • 3
    • 0346564605 scopus 로고    scopus 로고
    • Influence of the deposition pressure of undoped LPCVD polysilicon on films and Si-poly/oxide interfaces. Application to polycrystalline thin films transistors
    • Sao-Paulo, Brazil
    • F. Le Bihan, K. Mourgues, A. C. Salaün, L. Pichon, B. Fortin, K. Kis-Sion, and O. Bonnaud, "Influence of the deposition pressure of undoped LPCVD polysilicon on films and Si-poly/oxide interfaces. Application to polycrystalline thin films transistors," in Proc. XI Congr. Brazilian Microelectronics Society, Sao-Paulo, Brazil, 1996, pp. 353-357.
    • (1996) Proc. XI Congr. Brazilian Microelectronics Society , pp. 353-357
    • Le Bihan, F.1    Mourgues, K.2    Salaün, A.C.3    Pichon, L.4    Fortin, B.5    Kis-Sion, K.6    Bonnaud, O.7
  • 4
    • 0001450861 scopus 로고
    • Deposition and crystallization of a-Si low pressure chemically vapor deposited films obtained by low temperature pyrolysis of disilane
    • A. T. Voutsas and M. K. Hatalis, "Deposition and crystallization of a-Si low pressure chemically vapor deposited films obtained by low temperature pyrolysis of disilane," J. Electrochem. Soc., vol. 140, no. 3, pp. 871-877, 1993.
    • (1993) J. Electrochem. Soc. , vol.140 , Issue.3 , pp. 871-877
    • Voutsas, A.T.1    Hatalis, M.K.2
  • 6
    • 0003579922 scopus 로고
    • A metal-oxide-semiconductor (MOS) Hall element
    • R. C. Gallagher and W. S. Corak, "A metal-oxide-semiconductor (MOS) Hall element," Solid-State Electron., vol. 9, pp. 571-580, 1966.
    • (1966) Solid-state Electron. , vol.9 , pp. 571-580
    • Gallagher, R.C.1    Corak, W.S.2
  • 8
    • 0031097905 scopus 로고    scopus 로고
    • Low temperature (≤600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Toward a technology for flat panel displays
    • L. Pichon, F. Raoult, K. Mourgues, K. Kis-sion, T. Mohammed-Brahim, and O. Bonnaud, "Low temperature (≤600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Toward a technology for flat panel displays," Thin Solid Films, vol. 296, pp. 133-136, 1997.
    • (1997) Thin Solid Films , vol.296 , pp. 133-136
    • Pichon, L.1    Raoult, F.2    Mourgues, K.3    Kis-Sion, K.4    Mohammed-Brahim, T.5    Bonnaud, O.6
  • 9
    • 0030685310 scopus 로고    scopus 로고
    • Performance of thin film transistors on unhydrogenated in-situ doped polysilicon films obtained by solid phase crystallization
    • K. Mourgues, F. Raoult, L. Pichon, T. Mohammed-Brahim, D. Briand, and O. Bonnaud, "Performance of thin film transistors on unhydrogenated in-situ doped polysilicon films obtained by solid phase crystallization," in Proc. Mater. Res. Soc. Symp., vol. 471, 1997, pp. 155-160.
    • (1997) Proc. Mater. Res. Soc. Symp. , vol.471 , pp. 155-160
    • Mourgues, K.1    Raoult, F.2    Pichon, L.3    Mohammed-Brahim, T.4    Briand, D.5    Bonnaud, O.6
  • 11
    • 0030261596 scopus 로고    scopus 로고
    • High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process
    • H. M. Yang, Y. C. Huang, T. F. Lei, C. L. Lee, and S. C. Chao, "High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process," Sens. Actuators A, vol. 57, pp. 9-13, 1996.
    • (1996) Sens. Actuators A , vol.57 , pp. 9-13
    • Yang, H.M.1    Huang, Y.C.2    Lei, T.F.3    Lee, C.L.4    Chao, S.C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.