Undoped and arsenic-doped low temperature (∼165 °C) microcrystalline silicon for electronic devices process

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 968-971

  Kandoussi, K ^a   Simon, C ^a   Coulon, N ^a   Mohammed Brahim, T ^a   Moreac, A ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Chemical vapor deposition; Microcrystallinity; Scanning electron microscopy

Indexed keywords

ARSENIC; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY;

HYDROGEN PLASMA; MICROCRYSTALLINE SILICON FILMS; SUBSTRATE PRE-TREATMENT;

SILICON;

EID: 33745474771     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.147     Document Type: Article

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