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Volumn 45, Issue 4, 1999, Pages 299-310

Impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin film transistors

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIFFUSION IN SOLIDS; GLASS; HOT CARRIERS; IMPURITIES; LIQUID CRYSTAL DISPLAYS; POLYCRYSTALLINE MATERIALS; SILICON; SUBSTRATES;

EID: 0032667818     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00288-3     Document Type: Article
Times cited : (11)

References (20)
  • 9
    • 0032314775 scopus 로고    scopus 로고
    • 2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors
    • in press
    • 2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors, Microelectron. Reliability (1998) in press.
    • (1998) Microelectron. Reliability
    • Wang, Y.Z.1    Awadelkarim, O.O.2
  • 16
    • 11544311453 scopus 로고    scopus 로고
    • Solid-phase crystallization of a-Si:H films on glass for active-layers in thin film transistors: The effects of a silicon nitride layer between a-Si:H and glass
    • in press
    • Y. Wang S.J. Fonash, O.O. Awadelkarim, T. Gu, Solid-phase crystallization of a-Si:H films on glass for active-layers in thin film transistors: the effects of a silicon nitride layer between a-Si:H and glass, J. Electrochem. Soc. (1998) in press.
    • (1998) J. Electrochem. Soc.
    • Wang, Y.1    Fonash, S.J.2    Awadelkarim, O.O.3    Gu, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.