Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °c)

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 227-231

  Saboundji, A ^a   Coulon, N ^a   Gorin, A ^a   Lhermite, H ^a   Mohammed Brahim, T ^a   Fonrodona, M ^b   Bertomeu, J ^b   Andreu, J ^b  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Low temperature; Microcrystalline; Silicon; Thin film transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; FLAT PANEL DISPLAYS; GLASS; HOLE MOBILITY; LOW TEMPERATURE EFFECTS; SILICA; SILICON; SPUTTERING; THRESHOLD VOLTAGE;

FLAT-BAND VOLTAGE; GATE INSULATORS; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HW-CVD); MICROCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 22944465438     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.070     Document Type: Conference Paper

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