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Volumn 67, Issue , 1999, Pages 529-540

Polycrystalline silicon thin film transistors: State of the art and improvement of electrical characteristics

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTALLIZATION; EXCIMER LASERS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

EID: 0032680492     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.529     Document Type: Article
Times cited : (6)

References (31)
  • 1
    • 0344977057 scopus 로고    scopus 로고
    • Nomura Research Institute and Stanford resources Inc.
    • Nomura Research Institute and Stanford resources Inc. (1997).
    • (1997)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.