Air-gap polycrystalline silicon thin-film transistors for fully integrated sensors

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 165-167

  Mahfoz Kotb, H ^a   Salaun A C ^a   Mohammed Brahim, T ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Air gap; Low temperature; Microelectromechanical system (MEMS); Polysilicon; Thin film transistor (TFT)

Indexed keywords

CRYSTALLIZATION; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; MICROELECTROMECHANICAL DEVICES; POLYCRYSTALLINE MATERIALS; POLYSILICON; PULSED LASER APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SENSORS; SILICA; THRESHOLD VOLTAGE;

AIR GAP; GATE INSULATOR; INTEGRATED SENSORS; LOW TEMPERATURE GLASS SUBSTRATE TECHNOLOGY; POLYCRYSTALLINE SILICON; PULSED LASER CRYSTALLIZATION; SOLID PHASE CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0038682015     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809536     Document Type: Letter

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