Process to fabricate high performance solid phase crystallized n-type and p-type thin film transistors on glass substrate

Solid State Phenomena

Volumn 67, Issue , 1999, Pages 547-551

  Mourgues, K ^a   Raoult, F ^a   Helen, Y ^a   Mohammed Brahim, T ^a   Rogel, R ^a   Bonnaud, O ^a  

^a Campus de Beaulieu   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); LIQUID CRYSTAL DISPLAYS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAY (AMLCD); ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0032656567     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.547     Document Type: Article

References (18)

1. T. Tsukada, Mat. Res. Soc. Symp. Proc. Vol. 424, 3 (1997).
2. I. Wei-Wu, Mat. Res. Soc. Symp. Proc. Vol. 471, 125 (1997).
3. T. Mohammed-Brahim, M. Sarret, D. Briand, K. Kis Sion, L. Haji, O. Bonnaud, D. Louër and A. Hadja, Philosophical Magazine B Vol. 76, No. 2, 193 (1997).
4. D. B. Meakin, P. A. Coxon, P. Migliorato, J. Stoemenos and N. A. Economou, Appl. Phys. Lett. Vol. 50, 1894 (1987).
5. C. A. Dimitriadis, P. A. Coxon and N. A. Economou, IEEE Trans. Elect. Dev., ED-42, 950 (1995).
6. [6) D. Briand, M. Sarret, F. Le Bihan, O. Bonnaud and L. Pichon, Mater. Sci. Technol. 11, 1207 (1995).
7. K. Nakazawa, K. Takana, S. Suyama, K. Kato and S. Khoda, SID 90 Digest, 311 (1990).
8. Amir. A. Lakani, Solid State Electronic 27, 921 (1984).
9. S. K. Ghandhi, VLSI Fabrication Principles (Wiley, New York, 1983), Chap. 9.
10. K. Mourgues, F. Raoult, L. Pichon, T. Mohammed-Brahim, D. Briand and O. Bonnaud, Mat. Res. Soc. Symp. Proc. Vol. 471, 155 (1997).
11. L. Pichon, F. Raoult, K. Mourgues, K. Kis Sion, T. Mohammed-Brahim and O. Bonnaud, Thin Solid Films 296, 133 (1997).
12. J. G. Fossum, A. Ortiz-Conde, H. Shichijo and S. K. Banerjee, IEEE Trans. Elect. Dev., ED-32, 1878 (1985).
13. C. T. Angelis, C. A. Dimitriadis, I. S. Samaras, J. Brini, G. Kamarinos, V. K. Gueorguiev and T. E. Ivanov, J. Appl. Phys. 82, 4095 (1997).
14. L. Pichon, F. Raoult, O. Bonnaud, J. Pinel and M. Sarret, IEEE Elect. Dev. Lett., EDL-16,376 (1995)
15. nd Edition, 1981), p. 442.
16. C. F. Yeh, T. Z. Yang and T. J. Chen, IEEE Trans. Elect. Dev., ED-42, 307 (1995).
17. K. Tanaka and K. Kato, Jpn J. Appl. Phys. 34, L217 (1995).
18. K. Y. Choi, J. W. Lee and M. K. Han, IEEE Trans. Elect. Dev., ED-45, 1272 (1998).