Solid phase post-treatment of polysilicon films by a continuous argon laser

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 81-84

  Michaud, J F ^a   Rogel, R ^a   Mohammed Brahim, T ^a   Sarret, M ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Laser irradiation; Semiconductors; Silicon; Structural properties

Indexed keywords

ANNEALING; CONTINUOUS WAVE LASERS; CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LASER BEAM EFFECTS; THIN FILM TRANSISTORS; THIN FILMS;

IN-GRAIN DEFECTS; LASER CRYSTALLIZATION; SOLID PHASE CRYSTALLIZATION (SPC); SUPER LATERAL GROWTH (SLG);

POLYSILICON;

EID: 22944470091     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.040     Document Type: Conference Paper

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