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Volumn 471, Issue , 1997, Pages 191-196
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Enhancement of on/off current ratio of poly-silicon TFT by selective laser-induced crystallization of active layer
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
ANNEALING;
CRYSTALLIZATION;
DISPLAY DEVICES;
EXCIMER LASERS;
LASER APPLICATIONS;
LEAKAGE CURRENTS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
INDIUM TIN OXIDE FILMS;
ON/OFF CURRENT RATIO;
THIN FILM TRANSISTORS;
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EID: 0030683270
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-471-191 Document Type: Conference Paper |
Times cited : (3)
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References (6)
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