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Volumn 471, Issue , 1997, Pages 191-196

Enhancement of on/off current ratio of poly-silicon TFT by selective laser-induced crystallization of active layer

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; DISPLAY DEVICES; EXCIMER LASERS; LASER APPLICATIONS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030683270     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-471-191     Document Type: Conference Paper
Times cited : (3)

References (6)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.