메뉴 건너뛰기




Volumn 10, Issue 2, 2009, Pages 77-87

Semiconductor technologies for higher frequencies

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; CHANNEL MOBILITY; CMOS DEVICES; CONDUCTION BAND OFFSET; DC POWER CONSUMPTION; GATE COUNT; HIGHER FREQUENCIES; LARGE SIZES; SEMICONDUCTOR PROCESS; SEMICONDUCTOR TECHNOLOGY; STATIC FREQUENCY DIVIDERS; TARGET SPECIFICATIONS;

EID: 66249138892     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2008.931712     Document Type: Article
Times cited : (25)

References (53)
  • 3
    • 18844409188 scopus 로고    scopus 로고
    • High frequency solid-state electronic devices
    • vol, pp, May
    • R. J. Trew "High frequency solid-state electronic devices" IEEE Trans. Electron. Devices, vol. 52, pp. 638-649, May 2005.
    • (2005) IEEE Trans. Electron. Devices , vol.52 , pp. 638-649
    • Trew, R.J.1
  • 4
    • 0003342913 scopus 로고    scopus 로고
    • A temperature dependent model for the saturation velocity in semiconductor materials
    • vol, no, pp
    • R. Quay C. Moglestue V. Palankovski S. Selberherr "A temperature dependent model for the saturation velocity in semiconductor materials" Mater. Sci. Semicond. Process., vol. 3, no. 1-2, pp. 149-155, 2000.
    • (2000) Mater. Sci. Semicond. Process , vol.3 , Issue.1-2 , pp. 149-155
    • Quay, R.1    Moglestue, C.2    Palankovski, V.3    Selberherr, S.4
  • 8
    • 48649099805 scopus 로고    scopus 로고
    • 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz
    • D.-H. Kim J. A. del Alamo "30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz" IEEE Trans Electron. Device Lett., vol. 29, no. 8, pp. 830-833, Aug. 2008.
    • IEEE Trans Electron. Device Lett. , vol.29 , Issue.8 , pp. 830-833
    • Kim, D.-H.1    Del Alamo, J.A.2
  • 10
    • 34249940189 scopus 로고    scopus 로고
    • Enhancement-mode AlN/GaN HFETs using cat-CVD SiN
    • DOI 10.1109/TED.2007.896607
    • M. Higashiwaki T. Mimura T. Matsui "Enhancementmode AlN/GaN HFETs using Cat-CVD SiN" IEEE Trans. Electron. Devices, vol. 54, no. 6, pp. 1566-1570, June 2007. (Pubitemid 46876265)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.6 , pp. 1566-1570
    • Higashiwaki, M.1    Mimura, T.2    Matsui, T.3
  • 17
    • 50249173963 scopus 로고    scopus 로고
    • Type-II GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous f T, fMAX. 400 GHz
    • W. Snodgrass Bing-Ruey Wu; K. Y. Cheng M. Feng "Type-II GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous f T, fMAX. 400 GHz" in Proc. IEEE Electronic Devices Meeting, Dec. 10-12, 2007, pp. 663-666.
    • (2007) Proc. IEEE Electronic Devices Meeting , vol.10-12 , pp. 663-666
    • Snodgrass, W.1    Wu2    , B.-R.3    Cheng, K.Y.4    Feng, M.5
  • 20
    • 47349131105 scopus 로고    scopus 로고
    • High-speed analog-to-digital converters in SiGe tech nologies
    • J. Lee "High-speed analog-to-digital converters in SiGe tech nologies" in Dig. IEEE Compound Semiconductors IC Symp., Portland, Oct. 14-17, 2007, pp. 93-96.
    • (2007) Dig. IEEE Compound Semiconductors IC Symp , pp. 14-17
    • Lee, J.1
  • 27
    • 52249118979 scopus 로고    scopus 로고
    • A single-ended fully integrated SiGe 77/79 GHz receiver for automotive radar
    • vol, no, pp, Sept
    • L. Wang S. Glisic J. Borngraeber W. Winkler J.-C. Scheytt "A single-ended fully integrated SiGe 77/79 GHz receiver for automotive radar" IEEE J. Solid-State Circuits, vol. 43, no. 9, pp. 1897-1908, Sept. 2008.
    • (2008) IEEE J. Solid-State Circuits , vol.43 , Issue.9 , pp. 1897-1908
    • Wang, L.1    Glisic, S.2    Borngraeber, J.3    Winkler, W.4    Scheytt, J.-C.5
  • 28
    • 33749512228 scopus 로고    scopus 로고
    • A 165-Gb/s 4:1 multiplexer in InP DHBT technology
    • DOI 10.1109/JSSC.2006.878114, 1703674
    • J. Hallin T. Kjellberg T. Swahn "A 165-Gb/s 4:1 multiplexor in InP DHBT technology" IEEE J. Solid-State Circuits, vol. 41, no. 10, pp. 2209-2214, Oct. 2006. (Pubitemid 44523657)
    • (2006) IEEE Journal of Solid-State Circuits , vol.41 , Issue.10 , pp. 2209-2213
    • Hallin, J.1    Kjellberg, T.2    Swahn, T.3
  • 29
    • 10444270913 scopus 로고    scopus 로고
    • A 132-Gb/s 4:1 multiplexor in 0.13-μm SiGebipolar technology
    • vol, no, pp, Dec
    • M. Meghelli "A 132-Gb/s 4:1 multiplexor in 0.13-μm SiGebipolar technology" EEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2403-2407, Dec. 2004.
    • (2004) EEE J. Solid-State Circuits , vol.39 , Issue.12 , pp. 2403-2407
    • Meghelli, M.1
  • 31
    • 54049148266 scopus 로고    scopus 로고
    • A n ultra-wideband 7-bit 5-Gsps ADC implemented in submicron InP HBT technology
    • vol, no, pp, Oct
    • B. Chan B. Oyama C. Monier A. Gutierrez-Aitkin "A n ultra-wideband 7-bit 5-Gsps ADC implemented in submicron InP HBT technology" IEEE J. Solid-State Circuits, vol. 43, no. 10, pp. 2187-2193, Oct. 2008.
    • (2008) IEEE J. Solid-State Circuits , vol.43 , Issue.10 , pp. 2187-2193
    • Chan, B.1    Oyama, B.2    Monier, C.3    Gutierrez-Aitkin, A.4
  • 41
    • 57849089650 scopus 로고    scopus 로고
    • Wideband mm- Wave CML static divider in 65nm SOI CMOS technology
    • pp
    • D. D. Kim C. Cho J. Kim J.-O. Plouchart "Wideband mm- Wave CML static divider in 65nm SOI CMOS technology" in Proc. IEEE CICC 2008, pp. 627-634.
    • Proc. IEEE CICC 2008 , pp. 627-634
    • Kim, D.D.1    Cho, C.2    Kim, J.3    Plouchart, J.-O.4
  • 45
    • 0037319508 scopus 로고    scopus 로고
    • Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
    • H. Li H. Rein "Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology" IEEE J. Solid-State Circuits, vol. 38, no. 2, pp. 184-191, Feb. 2003.
    • IEEE J. Solid-State Circuits , vol.38 , Issue.2 , pp. 184-191
    • Li, H.1    Rein, H.2
  • 46
    • 0037292309 scopus 로고    scopus 로고
    • Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs
    • vol, no, pp, Feb
    • F. Sinnesbichler "Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs" IEEE Trans. Microwave Theory Tech., vol. 51, no. 2, pp. 422-430, Feb. 2003.
    • (2003) IEEE Trans. Microwave Theory Tech , vol.51 , Issue.2 , pp. 422-430
    • Sinnesbichler, F.1
  • 48
    • 34748914327 scopus 로고    scopus 로고
    • A SiGe monolithically integrated 278 GHz push-push oscillator
    • DOI 10.1109/MWSYM.2007.380420, 4263815, 2007 IEEE MTT-S International Microwave Symposium Digest
    • R. Wanner R. Lachner G. Olbrich P. Russer "A SiGe monolithically integrated 278 GHz push-push oscillator" in Dig. 2007 IEEE/MTT-S Int. Microwave Symp., June 3-8, 2007, pp. 333-336. (Pubitemid 47486011)
    • (2007) IEEE MTT-S International Microwave Symposium Digest , pp. 333-336
    • Wanner, R.1    Lachner, R.2    Olbrich, G.R.3    Russer, P.4
  • 49
    • 33144456788 scopus 로고    scopus 로고
    • 192 GHz push-push VCO in 0.13μm CMOS
    • DOI 10.1049/el:20064159
    • C. Cao E. Seok K. K. O "192 GHz push-push VCO in 0.13 μm CMOS" Electron. Lett., vol. 42, no. 4, pp. 208-210, Feb. 2006. (Pubitemid 43263026)
    • (2006) Electronics Letters , vol.42 , Issue.4 , pp. 208-210
    • Cao, C.1    Seok, E.2    O, K.K.3
  • 53
    • 66149173686 scopus 로고    scopus 로고
    • ICs for 100 Gb/s serial operation
    • vol, no, pp
    • T. Swahn Y. Baeyens M. Meghelli "ICs for 100 Gb/s serial operation" IEEE Microwave Mag., vol. 10, no. 2, pp. 58-67.
    • IEEE Microwave Mag. , vol.10 , Issue.2 , pp. 58-67
    • Swahn, T.1    Baeyens, Y.2    Meghelli, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.