High-frequency solid-state electronic devices

IEEE Transactions on Electron Devices

Volumn 52, Issue 5, 2005, Pages 638-649

  Trew, Robert J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Microwave solid state amplifiers; Microwave solid state devices

Indexed keywords

ELECTRON TUBES; FREQUENCIES; HETEROJUNCTIONS; MICROWAVE AMPLIFIERS; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SOLID STATE DEVICE STRUCTURES; TRANSISTORS;

MICROWAVE SOLID STATE AMPLIFIERS; MICROWAVE SOLID STATE DEVICES;

SOLID STATE DEVICES;

EID: 18844409188     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.845862     Document Type: Article

References (36)

1. F. Braun, "Uber die stromleitung durch schwefelmetalle," Ann. Phys. Chem., vol. 153, pp. 556-556, 1874.
2. J. A. Fleming, "Instrument for converting alternating currents into continuous currents," U.S. Patent 803 684, 1905.
3. L. DeForest, "Device for amplifying feeble electrical currents," U.S. Patent 841 387, 1907.
4. R. J. Trew, "SiC and GaN transistors: Is there one winner for microwave power applications?," Proc. IEEE, vol. 90, no. 6, pp. 1032-1047, Jun. 2002.
5. G. I. Haddad and R. J. Trew, "Microwave solid-state active devices," IEEE Microw. Theory Tech., vol. 50, no. 3, pp. 760-779, Mar. 2002.
6. J. E. Lilienfeld, "Method and apparatus for controlling electric currents," U.S. Patent 1 745 175, 1930.
7. J. E. Lilienfeld, "Device for controlling electric current," U.S. Patent 1 900 018, 1933.
8. O. M. Struetzer, "A crystal amplifier with high input impedance," Proc. IRE, vol. 38, pp. 868-868, Aug. 1950.
9. O. M. Struetzer, "Junction fieldistors," Proc. IRE, vol. 40, pp. 1377-1381, Nov. 1952.
10. W. Shockley, "A unipolar "field-effect" transistor," Proc. IRE, vol. 40, pp. 1365-1365, Nov. 1952.
11. J. Bardeen and W. H. Brattain, "The transistor, a semiconductor triode," Phys. Rev., vol. 71. pp. 230-230, 1948.
12. W. Shockly, "The theory of p-n junction in semiconductors and p-n junction transistors," Bell Syst. Tech. J., vol. 28, pp. 435-435, 1949.
13. S. Middelhoek, "Projection masking, thin photoresist layers and interface effects," IBM J. Res. Develop., vol. 14, pp. 117-124, Mar. 1970.
14. J. Turner, A. Waller, R. Bennett, and D. Parker, "An electron beam fabricated GaAs microwave field-effect transistor," in Proc. GaAs Related Compounds Symp. (Inst. Phys. Conf. Series), London, U.K., 1971, pp. 234-239.
15. P. Wolf, "Microwave properties of schottky-barrier field-effect transistors," IBM J. Res. Develop., vol. 14, pp. 125-141, Mar. 1970.
16. K. Drangeid, R. Sommerhalder, and W. Walter, "High-speed gallium- arsenide schottky barrier field-effect transistors," Electron. Lett., vol. 6, pp. 228-29, Apr. 1970.
17. W. Baechtold, W. Walter, and P. Wolf, "X and Ku band GaAs MESFET," Electron. Lett., vol. 8, pp. 35-37, Jan. 1972.
18. H. Kroemer, "Theory of a wide-gap emitter for transistors," Proc. IRE, vol. 45, pp. 1535-1537, Nov. 1957.
19. J. I. Song, K. B. Chough, C. J. Palmstrom, B. P. Van der Gaar, and W. P. Hong, "Carbon-doped based InP/InGaAs HBTs with ft = 200 GHz," in 52nd Annu. Device Research Conf. Dig., 1994, pp. 97-98.
20. M. J. Rodwell et al., "Submicron scaling of HBTs," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2606-2624, Nov. 2001.
21. S. S. Iyer, G. L. Patton, S. S. Delage, S. Tiwari, and J. M. C. Stork, "Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy," in IEDM Tech. Dig., 1987, pp. 74-76.
22. T. H. Ning, "History and future perspective of the modern silicon bipolar transistor," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2485-2491, Nov. 2001.
23. H. L. Stormer, R. Dingle, A. C. Gossard, W. Wiegmann, and M. D. Sturge, "Two-dimensional electron Gas at differentially doped GaAs-AlGaAs heterojunction interface," J. Vac. Sci. Technol., vol. 16, pp. 1517-1519, 1979.
24. T. Mimura, S. Hiyamizuk, T. Fujii, and K. Nanbu, "A new field-effect transistor with selectively doped GaAs-n-AlGaAs heterostructures," Jpn. J. Appl. Phys., vol. 19, pp. L225-L227, 1980.
25. H. G. Henry et al., "S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE," IEEE Trans. Electron Devices, vol. 51, no. 6, pp. 839-845, Jun. 2004.
26. R. C. Clarke and J. W. Palmour, "SiC microwave power technologies," Proc. IEEE, vol. 90, no. 6, pp. 987-992, Jun. 2002.
27. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm Gan HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 11, pp. 117-119, Nov. 2004.
28. U. K. Mishra, P. Parikh, and Y.-F. Wu, "AlGaN/GaN HEMTs-an overview of device operation and applications," Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002.
29. W. Shockley, "Negative resistance arising from transit time in semiconductor diodes," Bell Syst. Tech. J., vol. 33, pp. 799-826, Jul. 1954.
30. W. J. Read, "A proposed high-frequency negative resistance diode," Bell Syst. Tech. J., vol. 37, pp. 401-446, Mar. 1958.
31. J. B. Gunn, "Microwave oscillation of current in III-V semiconductors," Solid-State Comm., vol. 1, pp. 88-88, 1963.
32. B. K. Ridley and T. B. Watkins, "The possibility of negative resistance effects in semiconductors," Proc. Phys. Soc. Lond., vol. 78, pp. 293-293, 1961.
33. C. Hilsum, "Transferred electron amplifiers and oscillators," Proc. IRE, vol. 50, pp. 185-185, 1962.
34. C. A. Lee, R. L. Batdorf, W. Wiegmann, and G. Kaminsky, "The read diode - An avalanching transit-time, negative-resistance oscillator," Appl. Phys. Lett., vol. 6, pp. 89-91, Mar. 1965.
35. R. L. Johnston, B. C. Deloach, and B. G. Cohen, "A silicon diode microwave oscillator," Bell Syst. Tech. J., vol. 44, pp. 369-372, Feb. 1965.
36. "Special issue on solid-state microwave and millimeter-wave power generation, amplification, and control," IEEE Trans. Microw. Theory Tech., vol. MTT-27, May 1979.