-
1
-
-
0036500775
-
Terahertz technology
-
Mar
-
P. Siegel, "Terahertz technology," IEEE Trans. Microw. Theory Tech., vol. 50, no. 3, pp. 910-928, Mar. 2002.
-
(2002)
IEEE Trans. Microw. Theory Tech
, vol.50
, Issue.3
, pp. 910-928
-
-
Siegel, P.1
-
2
-
-
0034431329
-
W-band HEMT-oscillator MMICs using subharmonic injection locking
-
Dec
-
S. Kudszus, T. Berceli, A. Tessmann, M. Neumann, and W. H. Haydl, "W-band HEMT-oscillator MMICs using subharmonic injection locking," IEEE Trans. Microw. Theory Tech., vol. 48, no. 12, pp. 2526-2532, Dec. 2000.
-
(2000)
IEEE Trans. Microw. Theory Tech
, vol.48
, Issue.12
, pp. 2526-2532
-
-
Kudszus, S.1
Berceli, T.2
Tessmann, A.3
Neumann, M.4
Haydl, W.H.5
-
3
-
-
0029292254
-
155- and 213-GHz AlInAs/GalnAs/InP HEMT MMIC oscillators
-
Apr
-
S. E. Rosenbaum, B. K. Kormanyos, L. M. Jelloian, M. Matloubian, A. S. Brown, L. E. Larson, L. D. Nguyen, M. A. Thompson, L. P. B. Katehi, and G. M. Rebeiz, "155- and 213-GHz AlInAs/GalnAs/InP HEMT MMIC oscillators," IEEE Trans. Microw. Theory Tech., vol. 43, no. 4, pp. 927-932, Apr. 1995.
-
(1995)
IEEE Trans. Microw. Theory Tech
, vol.43
, Issue.4
, pp. 927-932
-
-
Rosenbaum, S.E.1
Kormanyos, B.K.2
Jelloian, L.M.3
Matloubian, M.4
Brown, A.S.5
Larson, L.E.6
Nguyen, L.D.7
Thompson, M.A.8
Katehi, L.P.B.9
Rebeiz, G.M.10
-
4
-
-
33847770325
-
Demonstration of sub-millimeter wave fundamental oscillators using 35-nm InP HEMT technology
-
Mar
-
V. Radisic, X. B. Mei, W. R. Deal, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, L. Samoska, A. Fung, T. Gaier, and R. Lai, "Demonstration of sub-millimeter wave fundamental oscillators using 35-nm InP HEMT technology," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 3, pp. 223-225, Mar. 2007.
-
(2007)
IEEE Microw. Wireless Compon. Lett
, vol.17
, Issue.3
, pp. 223-225
-
-
Radisic, V.1
Mei, X.B.2
Deal, W.R.3
Yoshida, W.4
Liu, P.H.5
Uyeda, J.6
Barsky, M.7
Samoska, L.8
Fung, A.9
Gaier, T.10
Lai, R.11
-
5
-
-
0034992994
-
A series of InGaP/InGaAs HBT oscillators up to D-band
-
May
-
K. Uchida, H. Matsuura, T. Yakihara, S. Kobayashi, S. Oka, T. Fujita, and A. Mura, "A series of InGaP/InGaAs HBT oscillators up to D-band," IEEE Trans. Microw. Theory Tech., vol. 49, no. 5, pp. 858-865, May 2001.
-
(2001)
IEEE Trans. Microw. Theory Tech
, vol.49
, Issue.5
, pp. 858-865
-
-
Uchida, K.1
Matsuura, H.2
Yakihara, T.3
Kobayashi, S.4
Oka, S.5
Fujita, T.6
Mura, A.7
-
6
-
-
30944455103
-
High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz
-
Oct
-
Y. Baeyens, N. Weimann, V. Houtsma, J. Weiner, Y. Yang, J. Frackoviak, A. Tate, and Y. K. Chen, "High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz," in IEEE Compound Semiconduct. Integrated Circuit Symp. Dig., Oct. 2005, pp. 208-211.
-
(2005)
IEEE Compound Semiconduct. Integrated Circuit Symp. Dig
, pp. 208-211
-
-
Baeyens, Y.1
Weimann, N.2
Houtsma, V.3
Weiner, J.4
Yang, Y.5
Frackoviak, J.6
Tate, A.7
Chen, Y.K.8
-
7
-
-
30344480204
-
A monolithically integrated 190-GHz SiGe push-push oscillator
-
Dec
-
R. Wanner, R. Lachner, and G. R. Olbrich, "A monolithically integrated 190-GHz SiGe push-push oscillator," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 12, pp. 862-864, Dec. 2005.
-
(2005)
IEEE Microw. Wireless Compon. Lett
, vol.15
, Issue.12
, pp. 862-864
-
-
Wanner, R.1
Lachner, R.2
Olbrich, G.R.3
-
8
-
-
33847236246
-
A monolith integrated 180 GHz SiGe HBT push-push oscillator
-
Oct
-
P. Roux, Y. Baeyens, O. Wohlgemuth, and Y. C. Chen, "A monolith integrated 180 GHz SiGe HBT push-push oscillator," in Gallium Arsenide and Other Semiconduct. Applicat. Symp. Dig., Oct. 2005, pp. 341-343.
-
(2005)
Gallium Arsenide and Other Semiconduct. Applicat. Symp. Dig
, pp. 341-343
-
-
Roux, P.1
Baeyens, Y.2
Wohlgemuth, O.3
Chen, Y.C.4
-
9
-
-
33144456788
-
A 192 GHz push-push VCO in 0.13 μm CMOS
-
Feb
-
C. Cao, E. Seok, and K. K. O, "A 192 GHz push-push VCO in 0.13 μm CMOS," Electron. Lett., vol. 42, pp. 208-210, Feb. 2006.
-
(2006)
Electron. Lett
, vol.42
, pp. 208-210
-
-
Cao, C.1
Seok, E.2
-
10
-
-
33646404336
-
High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz
-
May
-
H. Eisele and R. Kamoua, "High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 5, pp. 284-286, May 2006.
-
(2006)
IEEE Microw. Wireless Compon. Lett
, vol.16
, Issue.5
, pp. 284-286
-
-
Eisele, H.1
Kamoua, R.2
-
12
-
-
33847118913
-
Submicrometer InP/InGaAs heterojunction bipolar transistors with fT = 400 GHz and fmax > 500 GHz
-
May
-
D. W. Scott, P. C. Cheng, D. Sawdai, L. Dang, J. Wang, M. Barsky, W. Phan, B. Chan, B. Oyama, A. Gutierrez-Aitken, and A. Oki, "Submicrometer InP/InGaAs heterojunction bipolar transistors with fT = 400 GHz and fmax > 500 GHz," in Proc. Indium Phosphide and Relat. Mater. Conf., May 2006, pp. 100-103.
-
(2006)
Proc. Indium Phosphide and Relat. Mater. Conf
, pp. 100-103
-
-
Scott, D.W.1
Cheng, P.C.2
Sawdai, D.3
Dang, L.4
Wang, J.5
Barsky, M.6
Phan, W.7
Chan, B.8
Oyama, B.9
Gutierrez-Aitken, A.10
Oki, A.11
-
14
-
-
0015672127
-
Injection locking of microwave solid-state oscillators
-
Oct
-
K. Kurokawa, "Injection locking of microwave solid-state oscillators," Proc. IEEE, vol. 61, no. 10, pp. 1386-1410, Oct. 1973.
-
(1973)
Proc. IEEE
, vol.61
, Issue.10
, pp. 1386-1410
-
-
Kurokawa, K.1
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