Metamorphic HEMT MMICs and modules for use in a high-bandwidth 210 GHz radar

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 10, 2008, Pages 2194-2205

  Tessmann, Axel ^a   Kallfass, Ingmar ^a   Leuther, Arnulf ^a   Massler, Hermann ^a   Kuri, Michael ^a   Riessle, Markus ^a   Zink, Martin ^a   Sommer, Rainer ^b   Wahlen, Alfred ^b   Essen, Helmut ^b   Hurm, Volker ^a   Schlechtweg, Michael ^a   Ambacher, Oliver ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b FRAUNHOFER INSTITUTE FOR HIGH FREQUENCY PHYSICS AND RADAR TECHNIQUES FHR   (Germany)

Author keywords

Dual gate FET; Frequency multiplier; G band; Grounded coplanar waveguide (GCFW); High power amplifier (HFA); Inverse synthetic aperture radar (ISAR); Low noise amplifier (LNA); Metamorphic high electron mobility transistor (mHEMT)

Indexed keywords

AUDIO FREQUENCY AMPLIFIERS; BROADBAND AMPLIFIERS; ELECTRIC NETWORK TOPOLOGY; ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; FREQUENCY MULTIPLYING CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; IMAGING SYSTEMS; INTEGRATED CIRCUITS; MESFET DEVICES; MICROWAVE CIRCUITS; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NETWORKS (CIRCUITS); OXIDE MINERALS; POWER AMPLIFIERS; QUARTZ; RADAR; RADAR SYSTEMS; RESONANT TUNNELING; SYNTHETIC APERTURE RADAR; SYNTHETIC APERTURES; TELECOMMUNICATION SYSTEMS; WAVEGUIDES;

DUAL-GATE FET; FREQUENCY MULTIPLIER; G-BAND; GROUNDED COPLANAR WAVEGUIDE (GCFW); HIGH-POWER AMPLIFIER (HFA); LOW-NOISE AMPLIFIER (LNA); METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (MHEMT);

INVERSE SYNTHETIC APERTURE RADAR;

EID: 54049148668     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.2002931     Document Type: Conference Paper

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