메뉴 건너뛰기




Volumn , Issue , 2007, Pages 341-344

Highly efficient harmonically tuned InP D-HBT push-push oscillators operating up to 287 GHz

Author keywords

Bipolar transistor oscillators; Heterojunction bipolar transistors (HBTs); Millimeter wave oscillators

Indexed keywords

ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TUNING;

EID: 34748859851     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380440     Document Type: Conference Paper
Times cited : (27)

References (14)
  • 1
    • 0037292309 scopus 로고    scopus 로고
    • Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs
    • Feb
    • F. Sinnesbichler, "Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs", IEEE Transactions on Microwave Theory and Techniques, Vol.51, Issue 2, pp 422-430, Feb. 2003.
    • (2003) IEEE Transactions on Microwave Theory and Techniques , vol.51 , Issue.2 , pp. 422-430
    • Sinnesbichler, F.1
  • 2
    • 0035683134 scopus 로고    scopus 로고
    • Push-push oscillators for 94 and 140 GHz applications using standard pseudomorphic GaAs HEMTs, 2001
    • S. Kudszus et al., "Push-push oscillators for 94 and 140 GHz applications using standard pseudomorphic GaAs HEMTs", 2001 IEEE MTT-S International Microwave Symposium Digest, pp. 1571-1574, Vol. 3, 2001.
    • (2001) IEEE MTT-S International Microwave Symposium Digest , vol.3 , pp. 1571-1574
    • Kudszus, S.1
  • 3
    • 0000679024 scopus 로고    scopus 로고
    • A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth
    • Sept
    • K. Kobayashi et al., "A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth", IEEE Journal of Solid-State Circuits, Vol. 34, No. 9, pp. 1225-1232, Sept. 1999.
    • (1999) IEEE Journal of Solid-State Circuits , vol.34 , Issue.9 , pp. 1225-1232
    • Kobayashi, K.1
  • 4
    • 0034431326 scopus 로고    scopus 로고
    • Compact InP-based HBT VCOs with a wide tuning range at W- and D-band
    • December
    • Y. Baeyens et al, "Compact InP-based HBT VCOs with a wide tuning range at W- and D-band", IEEE Trans. on Microwave Theory and Techniques, Vol. 48, No. 12, pp. 2403-2408, December 2000.
    • (2000) IEEE Trans. on Microwave Theory and Techniques , vol.48 , Issue.12 , pp. 2403-2408
    • Baeyens, Y.1
  • 5
    • 0036713751 scopus 로고    scopus 로고
    • InP D-HBT IC's for 40-Gb/s and higher bitrate transceivers
    • Sept
    • Y. Baeyens et al., "InP D-HBT IC's for 40-Gb/s and higher bitrate transceivers", IEEE Journal of Solid-State Circuits, Vol. 37, No. 9, pp. 1152-1159, Sept. 2002.
    • (2002) IEEE Journal of Solid-State Circuits , vol.37 , Issue.9 , pp. 1152-1159
    • Baeyens, Y.1
  • 7
    • 0042594388 scopus 로고    scopus 로고
    • A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output
    • June
    • Y. Baeyens et al., "A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output", 2003 IEEE MTT-S IMS Digest, pp. 877-880, June 2003.
    • (2003) 2003 IEEE MTT-S IMS Digest , pp. 877-880
    • Baeyens, Y.1
  • 11
    • 33144456788 scopus 로고    scopus 로고
    • C. Cao, E. Seok, K.K. O, 192 GHz push-push VCO in 0.13 μm CMOS, Electronics Letters, 42, no.4, pp. 208- 210, 16 Feb. 2006.
    • C. Cao, E. Seok, K.K. O, "192 GHz push-push VCO in 0.13 μm CMOS," Electronics Letters, vol.42, no.4, pp. 208- 210, 16 Feb. 2006.
  • 12
    • 0029292254 scopus 로고
    • 155- and 213-GHz AlInAs/GalnAs/InP HEMT MMIC oscillators
    • April
    • Rosenbaum et al., "155- and 213-GHz AlInAs/GalnAs/InP HEMT MMIC oscillators", IEEE Trans. On Microwave Theory and Techniques, Vol. 43, Issue 4, pp. 927-932, April 1995.
    • (1995) IEEE Trans. On Microwave Theory and Techniques , vol.43 , Issue.4 , pp. 927-932
    • Rosenbaum1
  • 13
    • 0037319508 scopus 로고    scopus 로고
    • Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
    • Feb, Pages
    • H. Li, H. Rein, "Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology", IEEE Iournal of Solid-State Circuits, Vol. 38, Issue 2, pp. 184-191, Feb. 2003 Page(s):184 - 191
    • (2003) IEEE Iournal of Solid-State Circuits , vol.38 , Issue.2
    • Li, H.1    Rein, H.2
  • 14
    • 34748888130 scopus 로고    scopus 로고
    • Fully Dry-etched InP Double-Hetero Bipolar Transistors with ft > 400 GHz
    • State College, PA DRC
    • N. Weimann et al., "Fully Dry-etched InP Double-Hetero Bipolar Transistors with ft > 400 GHz", 2006 IEEE Device Research Conference, State College, PA (DRC 2006)
    • (2006) 2006 IEEE Device Research Conference
    • Weimann, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.