Improvements of electronic and optical characteristics of n-GaN -based structures by photoelectrochemical oxidation in glycol solution

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Shiozaki, Nanako ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ANODIC OXIDES; BASIC PROPERTIES; BONDING STATE; CAPACITANCE-VOLTAGE MEASUREMENTS; CHEMICAL COMPOSITIONS; COMPOUND SEMICONDUCTORS; ELECTRONIC CHARACTERISTICS; FUNDAMENTAL PROPERTIES; GALLIUM OXIDES; GAN-BASED STRUCTURES; INTERFACE-STATE DENSITIES; OPTICAL CHARACTERISTICS; OXIDE FORMATIONS; PHOTOELECTROCHEMICAL OXIDATION METHODS; PHOTOELECTROCHEMICAL OXIDATIONS; PHOTOLUMINESCENCE INTENSITIES; SURFACE CONTROLS; UV ILLUMINATIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ELECTRON MOBILITY; ETHYLENE GLYCOL; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDATION; PASSIVATION; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 63749119408     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079502     Document Type: Article

References (45)

1. M. A. Khan, M. S. Shur, Q. C. Chen, and J. N. Kuznia, Electron. Lett. 0013-5194 10.1049/el:19941461 30, 2175 (1994).
2. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 0018-9383 10.1109/16.906451 48, 560 (2001).
3. J. Kotani, T. Hashizume, and H. Hasegawa, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1771678 22, 2179 (2004).
4. T. Hashizume, J. Kotani, and H. Hasegawa, Appl. Phys. Lett. 0003-6951 10.1063/1.1762980 84, 4884 (2004).
5. Y. Li, X. Yi, X. Wang, J. Guo, L. Wang, G. Wang, F. Yang, Y. Zeng, and J. Li, Proc. SPIE 0277-786X 6841, 68410X-1-6 (2007).
6. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1585077 21, 1828 (2003).
7. G. Pozzovivo, J. Kuzmík, S. Golka, W. Schrenk, G. Strasser, D. Pogany, K. Čičo, M. apajna, K. Fröhlich, J. -F. Carlin, M. Gonschorek, E. Feltin, and N. Grandjean, Appl. Phys. Lett. 0003-6951 10.1063/1.2763956 91, 043509 (2007).
8. T. Hashizume and R. Nakasaki, Appl. Phys. Lett. 0003-6951 10.1063/1.1485309 80, 4564 (2002).
9. T. Hashizume and H. Hasegawa, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2004.05.091 234, 387 (2004).
10. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.8067 50, 8067 (1994).
11. P. Bogusawski, E. L. Briggs, and J. Bernholc, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51.17255 51, 17255 (1995).
12. J. Kuzmík, P. Javorka, M. Marso, and P. Kordoš, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/17/11/103 17, L76 (2002).
13. H. -M. Wu and L. -H. Peng, Phys. Status Solidi C 3, 2291 (2006). 1610-1634
14. C. Youtsey, I. Adesida, L. T. Romano, and G. Bulman, Appl. Phys. Lett. 0003-6951 10.1063/1.120758 72, 560 (1998).
15. T. Rotter, J. Aderhold, D. Mistele, O. Semchinova, J. Stemmer, D. Uffmann, and J. Graul, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(98) 00381-X 59, 350 (1999).
16. J. -M. Lee, K. -S. Lee, and S. -J. Park, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1645880 22, 479 (2004).
17. D. Mistele, T. Rotter, Z. Bougrioua, K. S. Röver, F. Fedler, H. Klausing, J. Stemmer, O. K. Semichinova, J. Aderhold, and J. Graul, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(200111)188:1<255::AID-PSSA2553.0.CO;2-L 188, 255 (2001).
18. L. -H. Huang, S. -H. Yeh, C. -T. Lee, H. Tang, J. Bardwell, and J. B. Webb, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2008.917326 29, 284 (2008).
19. M. Bartic, Y. Toyoda, C. I. Baban, and M. Ogita, Jpn. J. Appl. Phys. Part 1 45, 5186 (2006). 0021-4922
20. M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. G. Chu, K. Konstadinidis, J. P. Mannaerts, M. L. Schnoes, and G. J. Zydzik, J. Appl. Phys. 0021-8979 10.1063/1.359055 77, 686 (1995).
21. E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, Appl. Phys. Lett. 0003-6951 10.1063/1.2919728 92, 202120 (2008).
22. H. Hasegawa and H. L. Hartnagel, J. Electrochem. Soc. 0013-4651 10.1149/1.2132915 123, 713 (1976).
23. D. F. Wang, F. Shiwei, C. Lu, A. Motayed, M. Jah, S. N. Mohammad, K. A. Jones, and L. Salamanca-Riba, J. Appl. Phys. 0021-8979 10.1063/1.1350617 89, 6214 (2001).
24. A. V. Davydov, A. Motayed, W. J. Boettinger, R. S. Gates, Q. Z. Xue, H. C. Lee, and Y. K. Yoo, Phys. Status Solidi C 2, 2551 (2005). 1610-1634
25. T. Rotter, D. Mistele, J. Stemmer, F. Fedler, J. Aderhold, J. Graul, V. Schwegler, C. Kirchner, M. Kamp, and M. Heuken, Appl. Phys. Lett. 0003-6951 10.1063/1.126822 76, 3923 (2000).
26. D. Zhuang and J. H. Edgar, Mater. Sci. Eng., R. 48, 1 (2005). 0927-796X
27. M. Ohkubo and O. Takai, IPAP Conf. Ser. 1, 770 (2000).
28. C. Youtsey, I. Adesida, and G. Bulman, Appl. Phys. Lett. 0003-6951 10.1063/1.119365 71, 2151 (1997).
29. M. Hall, M. -F. Rau, and J. W. Evans, J. Electrochem. Soc. 0013-4651 10.1149/1.2109052 133, 1934 (1986).
30. R. M. Finne and D. L. Klein, J. Electrochem. Soc. 0013-4651 10.1149/1.2426793 114, 965 (1967).
31. C. Youtsey, I. Adesida, and G. Bulman, Electron. Lett. 0013-5194 10.1049/el:19970121 33, 245 (1997).
32. H. Cho, S. M. Donovan, C. R. Abernathy, S. J. Pearton, F. Ren, J. Han, and R. Shul, MRS Internet J. Nitride Semicond. Res. 1092-5783 4 S1, G6.40 (1999); http://nsr.mij.mrs.org/4S1/G6.40/.
33. CRC Handbook of Chemistry and Physics 1989-1990 (CRC, Boca Raton, 1989), p. B-92.
34. W. Klemm and H. U. Vogel, Z. Anorg. Allg. Chem. 0044-2313 10.1002/zaac.19342190106 219, 45 (1934).
35. S. M. Spitzer, B. Schwartz, and M. Kuhn, J. Electrochem. Soc. 0013-4651 10.1149/1.2403530 120, 669 (1973).
36. W. W. Harvey, J. Electrochem. Soc. 0013-4651 10.1149/1.2426630 114, 472 (1967).
37. W. W. Harvey and J. Kruger, Electrochim. Acta 0013-4686 10.1016/0013-4686(71)85154-X 16, 2017 (1971).
38. L. -H. Peng, C. -W. Chuang, J. -K. Ho, C. -N. Huang, and C. -Y. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.120879 72, 939 (1998).
39. S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Önneby, S. E. Mohney, and R. J. Molnar, Appl. Phys. Lett. 0003-6951 10.1063/1.118944 70, 2156 (1997).
40. R. Carin, J. P. Deville, and J. Werckmann, Surf. Interface Anal. 0142-2421 10.1002/sia.740160116 16, 65 (1990).
41. J. Hedman and N. Martensson, Phys. Scr. 0031-8949 10.1088/0031-8949/22/2/ 015 22, 176 (1980).
42. Y. Mizokawa, O. Komoda, and S. Miyase, Thin Solid Films 0040-6090 10.1016/0040-6090(88)90288-X 156, 127 (1988).
43. M. Pourbaix, Atlas of Electrochemical Equilibria in Aqueous Solutions, 2nd English ed. (National Association of Corrosion Engineers, Houston, 1974).
44. J. Kotani, M. Kaneko, H. Hasegawa, and T. Hashizume, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2216722 24, 2148 (2006).
45. C. Bae and G. Lucovsky, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1807396 22, 2402 (2004).