Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 479-482

  Lee, Ji Myon ^a   Lee, Kug Seung ^b   Park, Seong Ju ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER CONCENTRATION; CATHODES; CHLORINE; COOLING; ELECTRIC POTENTIAL; ETCHING; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MORPHOLOGY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; THERMAL CONDUCTIVITY;

BUFFERED OXIDE ETCH (BOE); ETCH-INDUCED DAMAGE; ETCH-INDUCED DONORS; RECOMBINATION PROCESSES;

GALLIUM NITRIDE;

EID: 2342537112     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1645880     Document Type: Article

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