Oxygen sensitivity in gallium oxide thin films and single crystals at high temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 5186-5188

  Bartic, Marilena ^a   Toyoda, Yoshitaka ^a   Baban, Cristian Ioan ^b   Ogita, Masami ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

High temperature; Oxygen sensitivity; Single crystal; Thin film; Ga2O3

Indexed keywords

ELECTRODES; HIGH TEMPERATURE OPERATIONS; OXYGEN SENSORS; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS;

HIGH TEMPERATURE; OXYGEN SENSITIVITY; Β-GA2O3;

THIN FILMS;

EID: 33745250086     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5186     Document Type: Article

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