Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks

Microelectronics Reliability

Volumn 48, Issue 4, 2008, Pages 514-525

  Atanassova, E ^a   Paskaleva, A ^a   Novkovski, N ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRODES; LEAKAGE CURRENTS; PARAMETER ESTIMATION;

CURRENT-VOLTAGE CURVES; DETRAPPING PROCESSES;

CAPACITORS;

EID: 42649110979     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.11.002     Document Type: Article

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