A comprehensive model for the i -V characteristics of metal-Ta 2 O 5 /SiO 2 -Si structures

Applied Physics A: Materials Science and Processing

Volumn 83, Issue 3, 2006, Pages 435-445

  Novkovski, N ^a   Atanassova, E ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRONS; MICROSTRUCTURE; SILICON COMPOUNDS;

COMPREHENSIVE MODEL; ELECTRICAL PROPERTIES; HOPPING CONDUCTION; TUNNELING;

TANTALUM COMPOUNDS;

EID: 33645327119     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3567-3     Document Type: Article

References (28)

1. International Technology Roadmap for Semiconductors SIA, San Jose, CA, http://public.itrs.net/files/2003ITRS
2. F.C. Chiu, J.J. Wang, J.Y. Lee, C. Wu, J. Appl. Phys. 81, 8911 (1997)
3. D. Frohman-Bentchkowsky, M. Lenzlinger, J. Appl. Phys. 40, 3307 (1969)
4. C. Chaneliere, J.L. Autran, R.A.B. Devine, Appl. Phys. Lett. 86, 480 (1999)
5. S. Banerjee, B. Shen, I. Chen, J. Bohlman, G. Brown, R. Doering, J. Appl. Phys. 65, 1140 (1989)
6. E. Atanassova, N. Novkovski, A. Paskaleva, M. Pecovska-Gjorgjervich, Solid State Electron. 46, 1887 (2002)
7. N. Novkovski, E. Atanassova, Appl. Phys. Lett. 85, 3142 (2004)
8. E. Atanassova, Microelectron. Reliab. 39, 1185 (1999)
9. E. Atanassova, D. Spassov, Appl. Surf. Sci. 135, 71 (1998)
10. E. Atanassova, D. Spassov, A. Paskaleva, J. Koprinarova, M. Gueorgieva, Microelectron. J. 33, 907 (2002)
11. E. Atanassova, D. Spassov, Microelectron. J. 30, 265 (1999)
12. E. Atanassova, D. Spassov, Microelectron. Reliab. 42, 1171 (2002)
13. E. Atanassova, A. Paskaleva, N. Novkovski, M. Georgieva, J. Appl. Phys. 97, 094 104 (2005)
14. E. Rosenbaum, L.F. Register, IEEE Trans. Electron. Dev. 44, 3137 (1997)
15. W.S. Lau, L. Zhong, A. Lee, C.H. See, Taejoon Han, N.P. Sandler, T.C. Chong, Appl. Phys. Lett. 71, 500 (1997)
16. W.S. Lau, L.L. Leong, T. Han, N.P. Sandler, Appl. Phys. Lett. 83, 2835 (2003)
17. F.-C. Chiu, J.-J. Wang, J.Y. Lee, S.C. Wu, J. Appl. Phys. 81, 8911 (1997)
18. O. Blank, H. Reisinger, R. Stengl, M. Gutsche, F. Wiest, V. Capodieci, J. Schulze, I. Eisele, J. Appl. Phys. 97, 044107 (2005)
19. M. Lenzlinger, E.H. Snow, J. Appl. Phys. 40, 278 (1969)
20. M.V. Fischetti, D.J. DiMaria, Solid State Electron. 31, 629 (1988)
21. J.R. Yeargan, H.L. Taylor, J. Appl. Phys. 39, 5600 (1968)
22. K.N. Yang, H.T. Huang, M.C. Chang, C.M. Chu, Y.S. Chen, M.J. Chen, Y.M. Lin, M.C. Yu, S.M. Yang, D.C.H. Yu, M.S. Liang, IEEE Trans. Electron. Dev. 47, 2161 (2000)
23. N. Yang, W.K. Henson, J.R. Hauser, J. Wortman, IEEE Trans. Electron. Dev. 46, 1464 (1999)
24. K. Maitra, N. Bhat, J. Appl. Phys. 93, 1064 (2003)
25. S.M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, Chichester, Brisbane, Toronto, Singapore, 1981)
26. N. Novkovski, A. Paskaleva, E. Atanassova, Semicond. Sci. Technol. 20, 233 (2005)
27. N. Novkovski, E. Atanassova, Appl. Phys. A 81, 1191 (2005)
28. N. Novkovski, E. Atanassova, Appl. Phys. Lett. 86, 152 104 (2005)