메뉴 건너뛰기




Volumn 516, Issue 23, 2008, Pages 8684-8692

Electrical characteristics of Ti-doped Ta2O5 stacked capacitors

Author keywords

Capacitors; Doping; Electrical measurements; High dielectric constant stacks; Titanium doped tantalum oxide

Indexed keywords

CAPACITORS; DOPING; ELECTRICAL CHARACTERISTICS; ELECTRICAL MEASUREMENTS; HIGH-DIELECTRIC CONSTANT STACKS; TITANIUM DOPED TANTALUM OXIDE;

EID: 50849105742     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.003     Document Type: Article
Times cited : (31)

References (36)
  • 1
    • 50849137542 scopus 로고    scopus 로고
    • The Intern. Techn. Roadmap for Semicond., (ITRS) 2006 edn, http://public.itrs.net.
    • The Intern. Techn. Roadmap for Semicond., (ITRS) 2006 edn, http://public.itrs.net.
  • 5
    • 3042715207 scopus 로고    scopus 로고
    • Houssa M. (Ed), Institute of Physics Publishing, Bristol, UK
    • In: Houssa M. (Ed). High-k Gate Dielectrics (2004), Institute of Physics Publishing, Bristol, UK
    • (2004) High-k Gate Dielectrics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.